Progresses in the pulse shape identification with silicon detectors within the FAZIA Collaboration

“…A small cluster of events induced by an electronic pulse generator is present in both panels. These plots are those commonly studied and used by the FAZIA Collaboration as explained in [9][10][11]. It appears that no separation can be obtained for the various ions.…”

Section: Under Beam Testmentioning

confidence: 99%

“…Moreover, we developed new electronics, both the analogue stages based on high-quality charge and currentsensitive preamplifiers [5] and the subsequent processing circuits capable of fast real-time analysis and transfer of the sampled data streams [6][7][8]. It has been shown that particle identification thresholds are significantly reduced using the PSA with respect to standard ΔE − E technique for 300 μm front Si detectors, provided that highquality detectors (in reverse mounting configuration) and electronics are employed [9][10][11]. Expressed as a function of the range in silicon, particle (charge) identification thresholds resulted to be around 30 μm for Z = 5, growing up to 150 μm for Z = 40 [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

“…It has been shown that particle identification thresholds are significantly reduced using the PSA with respect to standard ΔE − E technique for 300 μm front Si detectors, provided that highquality detectors (in reverse mounting configuration) and electronics are employed [9][10][11]. Expressed as a function of the range in silicon, particle (charge) identification thresholds resulted to be around 30 μm for Z = 5, growing up to 150 μm for Z = 40 [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

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Low-temperature technique of thin silicon ion implanted epitaxial detectors

et al. 2015

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Abstract.A new technique of large-area thin ion implanted silicon detectors has been developed within the R&D performed by the FAZIA Collaboration. The essence of the technique is the application of a lowtemperature baking process instead of high-temperature annealing. This thermal treatment is performed after B + ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from 241 Am ( E α = 5.5 MeV). Preliminary tests on the first thin detector (area ≈ 20 × 20 mm 2 ) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction 84 Kr(E = 35 A MeV)+ 112 Sn. The ΔE −E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2 A MeV depending on the ion charge.

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“…A key feature of FAZIA is the Pulse Shape Analysis (PSA) of detector signals. PSA is employed to identify fragments stopped in the first silicon [13][14][15], thus lowering the identification thresholds with respect to the standard ΔE-E technique, while at the same time avoiding the technical complications associated with gas detectors. The second silicon detector (or the combination of the two silicon detectors) and the CsI(Tl) constitute a ΔE-E telescope for identifing the most energetic LCP's and IMF's.…”

Section: Introductionmentioning

confidence: 99%

A single-chip telescope for heavy-ion identification

et al. 2012

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Abstract.A ΔE-E telescope exploiting a single silicon chip for both ΔE measurement and scintillation light collection has been tested. It is a Si-CsI(Tl) telescope tailored for mass identification of light charged particles and intermediate mass fragments. A procedure based on two different shaping filters allows for extraction of the ΔE-E information from the single silicon signal. The quality of the obtained fragment identification is expressed in terms of a figure of merit and compared to that of a standard ΔE-E telescope. The presented configuration could be a good candidate for the basic cell of a large solid angle array of ΔE-E telescopes, given the reduction in complexity and cost of the front-end electronics.

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Progresses in the pulse shape identification with silicon detectors within the FAZIA Collaboration

Cited by 49 publications

References 15 publications

FAZIA applications

FAZIA applications

Low-temperature technique of thin silicon ion implanted epitaxial detectors

A single-chip telescope for heavy-ion identification

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