Progression of Silicon Solar Cells Luminescence Diagnostic Methods

Abstract

Diagnostic of silicon solar cells defects is permanently one of most important steps in production of solar cells. Specify of diagnostic methods leads to a better understanding and more detailed analysis of manufactured cells. Luminescence methods of solar cells are fast and some of the most common methods today. According to the excitation method of luminescence radiation from silicon solar cells we talk about electroluminescence or photoluminescence methods. Spectral response of using CCD camera with those methods is in band-gap infrared wave length area. The main idea of this paper is to analyze emitted infrared radiation silicon solar cell under the forward bias by polarization spectroscopy. This analysis opens up for potential next new questions in diagnostics defects silicon solar cells by luminescence methods.

Electroluminescence as a Tool to Study the Polarization Characteristics and Generation Mechanism in Silicon PV Panels

“…Excited by external positive bias voltage, photovoltaic cells usually emit short wave infrared light with a peak wavelength of about 1150 nm which has polarization characteristics [4]. Polarization is the fourth piece of important information in addition to basic attribute strength, wavelength, and phase of electromagnetic waves.…”

Photovoltaic Modules Destruction Analysis

“…After analyzing of electroluminescence radiation (see figure 1 and 2) it was confirmed the correlation of destruction of photovoltaic cells with the areas of heavy damage of the cover glass and there were detected several other places with a strong destruction of the cells, which were further analyzed. For an explanation -Electroluminescent radiation corresponds to the degree of damage and the current density in the photovoltaic cell [1][2]. Dark spots are areas with no current passing through the silicon substrate or non-radiative areas corresponding to defective areas.…”