Projected Performance of InGaAs/GaAs Quantum Dot Solar Cells: Effects of Cap and Passivation Layers

Ankhi, Atia Islam; Islam, Md. Rafiqul; Hasan, Md. Tanvir; Hossain, Eklas

doi:10.1109/access.2020.3039457

Cited by 7 publications

(1 citation statement)

References 35 publications

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“…The efficiency of the planar CH 3 NH 3 PbI 3based inverted solar cell was experimentally reported to be 13.97% when a 1.3:1.3 M mixture of PbI 2 -CH 3 NH 3 I was produced by spinning at a speed of 4000 rpm [24]. To increase the efficiency of solar cells, surface textures [25], coating with optical layers [26] and introduction of nanoparticles [27] or quantum dots [28] are used in practice.…”

Section: Introductionmentioning

confidence: 99%

Gold Nanoparticles Introduced ZnO/Perovskite/ Silicon Heterojunction Solar Cell

Gulomov

Accouche

2022

IEEE Access

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Renewable energy sources like photovoltaics have the potential to mitigate the negative consequences of pollution and global warming. The solar sector has shown exponential growth and is quickly becoming a viable alternative to fossil fuels. Currently, the great majority of solar modules are composed of crystalline silicon. To make photovoltaics more competitive, affordability and efficiency are two of the most important elements. Metal nanoparticles can be introduced or a heterojunction can be made using appropriate materials to increase the absorption coefficient of a silicon-based solar cell, which boost the total efficiency of the solar module. Therefore, in this study, we used Sentaurus TCAD simulation to examine the effects of gold nanoparticles introduced with various sizes and periodicities on the photoelectric characteristics of ZnO/Si and Perovskite/Si solar cells. Accordingly, all of the photoelectric characteristics of the perovskite/Si solar cell have shown a clear sinusoidal connection with the nanoparticle periodicity. When the gold nanoparticle size changed from 6 nm to 9 nm, the period of the sinusoidal function changed to π. The photoelectric parameters of ZnO/Si solar cells changed in a sinusoidal pattern based on the nanoparticle's periodicity, but this was true only when the nanoparticles size was between 9 nm and 21 nm. According to the obtained results, the maximum values of short-circuit current, open circuit voltage and fill factor are 10.47 mA/cm 2 , 0.384 V, 71.06% for perovskite/Si and 10.52 mA/cm 2 , 0.306 V, 71.12% for ZnO/Si. The minimum current density of the perovskite/Si solar cell was identical when compared to the solar cell without nanoparticles. When a gold nanoparticle with a size of 6 nm was introduced into the ZnO/Si solar cell with a periodicity of 120 nm, the short circuit current decreased by a factor of 3.81 compared to the solar cell without the nanoparticle. It has been scientifically proven that Fano interference is responsible for the sinusoidal relationship between the short-circuit current of the solar cells and the periodicity of the nanoparticle.

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Section: Introductionmentioning

confidence: 99%

Gold Nanoparticles Introduced ZnO/Perovskite/ Silicon Heterojunction Solar Cell

Gulomov

Accouche

2022

IEEE Access

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Mathematical Modeling of Core-Multishell Quantum Dot with Capped Oxides: a Comprehensive Study

Hasanirokh,

Naifar

2023

Plasmonics

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Design and simulation of type-I graphene/Si quantum dot superlattice for intermediate-band solar cell applications

Sarkhoush

Saghai

Soofi

2022

Front. Optoelectron.

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Recent experiments suggest graphene-based materials as candidates for use in future electronic and optoelectronic devices. In this study, we propose a new multilayer quantum dot (QD) superlattice (SL) structure with graphene as the core and silicon (Si) as the shell of QD. The Slater–Koster tight-binding method based on Bloch theory is exploited to investigate the band structure and energy states of the graphene/Si QD. Results reveal that the graphene/Si QD is a type-I QD and the ground state is 0.6 eV above the valance band. The results also suggest that the graphene/Si QD can be potentially used to create a sub-bandgap in all Si-based intermediate-band solar cells (IBSC). The energy level hybridization in a SL of graphene/Si QDs is investigated and it is observed that the mini-band formation is under the influence of inter-dot spacing among QDs. To evaluate the impact of the graphene/Si QD SL on the performance of Si-based solar cells, we design an IBSC based on the graphene/Si QD (QDIBSC) and calculate its short-circuit current density (Jsc) and carrier generation rate (G) using the 2D finite difference time domain (FDTD) method. In comparison with the standard Si-based solar cell which records Jsc = 16.9067 mA/cm2 and G = 1.48943 × 1028 m−3⋅s−1, the graphene/Si QD IBSC with 2 layers of QDs presents Jsc = 36.4193 mA/cm2 and G = 7.94192 × 1028 m−3⋅s−1, offering considerable improvement. Finally, the effects of the number of QD layers (L) and the height of QD (H) on the performance of the graphene/Si QD IBSC are discussed. Graphical abstract

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Projected Performance of InGaAs/GaAs Quantum Dot Solar Cells: Effects of Cap and Passivation Layers

Cited by 7 publications

References 35 publications

Gold Nanoparticles Introduced ZnO/Perovskite/ Silicon Heterojunction Solar Cell

Gold Nanoparticles Introduced ZnO/Perovskite/ Silicon Heterojunction Solar Cell

Mathematical Modeling of Core-Multishell Quantum Dot with Capped Oxides: a Comprehensive Study

Design and simulation of type-I graphene/Si quantum dot superlattice for intermediate-band solar cell applications

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