Projected performance of Si- and 2D-material-based SRAM circuits ranging from 16 nm to 1 nm technology nodes

Lu, Yu-Cheng; Huang, Jing-Kai; Chao, Kai-Yuan; Li, Lain-Jong; Hu, Vita Pi-Ho

doi:10.1038/s41565-024-01693-3

Nat. Nanotechnol.

2024

DOI: 10.1038/s41565-024-01693-3

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Projected performance of Si- and 2D-material-based SRAM circuits ranging from 16 nm to 1 nm technology nodes

Yu-Cheng Lu,

Jing-Kai Huang,

Kai-Yuan Chao

et al.

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Cited by 4 publications

References 27 publications

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Analytical Photoresponses of Schottky‐Contact MoS₂ Phototransistors

Wei,

Liu,

Wang

et al. 2024

Small

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High‐gain photodetectors based on 2D semiconductors have been extensively investigated in the past decades. However, the underlying mechanism remains in dispute without a proper analytical theory. On one side, the classical photogain theory is not applicable, as it was derived on two misplaced assumptions. On the other side, unexpected potential barriers usually present in 2D semi‐conductors but their effect on the ultrahigh gain has been largely ignored. In this work, we first established a universal I‐V equation for Schottky‐contact MoS2 phototransistors, modeled with two anti‐symmetric Schottky diodes and a channel resistor in series. It has been proved to be valid under varying conditions of gate voltage, temperature, light illumination and bias voltage. Moreover, we established analytical equations for photocurrent and gain, which clearly shows that ultrahigh gain is created by light‐induced modulation of potential barrier in exponential form. Finally, the theory was validated on 40 samples by verifying the I–V characteristics and minority carrier lifetime. Our results not only shed light on the working mechanism of 2D phototransistors, but also present important advance for device modeling and design in 2D integrated circuits.

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Analytical Photoresponses of Schottky‐Contact MoS₂ Phototransistors

Wei,

Liu,

Wang

et al. 2024

Small

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Ultrahigh Photoresponsivity Enabled by Carrier Multiplication in a Self-Powered Solar-Blind Photodetector Based on the WS₂/Graphene Heterostructure

Ma,

Ren,

Yan

et al. 2024

ACS Photonics

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The development of high-performance, low-power solar-blind photodetectors (SBPDs) holds significant promise for both military and civilian applications. Compared with wide-bandgap semiconductors, two-dimensional (2D) materials exhibit advantageous characteristics in the threshold and efficiency of carrier multiplication (CM) due to enhanced Coulomb interaction and relaxed momentum conservation. This allows one incident highenergy photon to generate two or more electron−hole pairs effectively, positioning them as viable alternatives for the fabrication of high-performance self-powered SBPDs. Here, we have designed a vertically aligned 2D WS 2 /graphene photodetector with Au as the contact electrodes, forming a unilateral Schottky junction to facilitate the efficient transfer of high-energy electrons generated in the WS 2 to the graphene without thermal relaxation. This enables efficient CM within graphene, resulting in an ultrahigh responsivity of 77 mA/W and an external quantum efficiency of 36% at 265 nm light with zero bias. This work offers invaluable insights into the development of next-generation SBPDs with high performance and low power consumption.

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Ensemble Learning-Fused Solution to the Inverse Problem in Integrated Optical Critical Dimension Metrology

Guo,

Liu,

et al. 2025

IEEE Trans. Instrum. Meas.

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Projected performance of Si- and 2D-material-based SRAM circuits ranging from 16 nm to 1 nm technology nodes

Cited by 4 publications

References 27 publications

Analytical Photoresponses of Schottky‐Contact MoS₂ Phototransistors

Analytical Photoresponses of Schottky‐Contact MoS₂ Phototransistors

Ultrahigh Photoresponsivity Enabled by Carrier Multiplication in a Self-Powered Solar-Blind Photodetector Based on the WS₂/Graphene Heterostructure

Ensemble Learning-Fused Solution to the Inverse Problem in Integrated Optical Critical Dimension Metrology

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Projected performance of Si- and 2D-material-based SRAM circuits ranging from 16 nm to 1 nm technology nodes

Cited by 4 publications

References 27 publications

Analytical Photoresponses of Schottky‐Contact MoS2 Phototransistors

Analytical Photoresponses of Schottky‐Contact MoS2 Phototransistors

Ultrahigh Photoresponsivity Enabled by Carrier Multiplication in a Self-Powered Solar-Blind Photodetector Based on the WS2/Graphene Heterostructure

Ensemble Learning-Fused Solution to the Inverse Problem in Integrated Optical Critical Dimension Metrology

Contact Info

Product

Resources

About

Analytical Photoresponses of Schottky‐Contact MoS₂ Phototransistors

Analytical Photoresponses of Schottky‐Contact MoS₂ Phototransistors

Ultrahigh Photoresponsivity Enabled by Carrier Multiplication in a Self-Powered Solar-Blind Photodetector Based on the WS₂/Graphene Heterostructure