Prolonged spin relaxation time in Zn-doped GaAs/GaAsP strain-compensated superlattice

Abstract

A GaAs/GaAsP strain-compensated superlattice (SL) is a highly promising spin-polarized electron source. To realize higher quantum efficiency, it is necessary to consider spin relaxation mechanisms. We have investigated the electron spin relaxation time in a Zn-doped GaAs/GaAsP strain-compensated SL by time-resolved spin-dependent pump and probe reflection measurements. The long spin relaxation time of 104 ps was observed at room temperature (RT), which is about three times longer than that of conventional undoped GaAs multiple quantum wells. Even when the excitation power increases from 30 to 110 mW, the change in the spin relaxation time at RT was small. This relationship implies that the intensity of the electron beam can be increased without affecting the spin relaxation time. These results indicate that a Zn-doped GaAs/GaAsP strain-compensated SL has the great advantage for use as a spin-polarized electron source.

Electronic Structure Investigation of GaN Nanowire Doped with Transition Metals Particles via First Principle

“…This polarization information is an important means to detect the properties of matter, and can help to obtain many unique physical information. [ 4,5 ] It provides powerful research methods for many experiments and are also a hot spot in the field of electron accelerator research. [ 1 ]…”

The effective light‐harvesting performance of graded compositional Al x Ga 1−x N nano‐cone arrays photocathode for ultraviolet detector—A numerical investigation and simulation

“…With the rapid development of next‐generation electron accelerators and ultraviolet (UV) space detectors, the market puts higher standards on the performance indexes such as sensitivity, spectral response range, and emission current density . The negative electron affinityphotocathodes with high quantum efficiency and extended working life have the potential to be applied to the core components in next‐generation electron accelerators and UV detectors . III‐nitride has wide bandgap adjustment from deep UV to near‐infrared, making AlGaN photocathodes an excellent choice .…”