Promising Engineering Approaches for Improving the Reliability of HfZrO _x 2-D and 3-D Ferroelectric Random Access Memories

Origin of the negative longitudinal piezoelectric effect and electric auxetic effect in hexagonal AIBIVCV semiconductors

“…For example, in a previous study, 19 we have computationally screened 34 binary wurtzite semiconductors and identified 10 compounds with NLPE but none with EAE. The anomalous NLPE and EAE may offer novel avenues in pursuit of a higher P s via pressure/strain engineering, which may find promising applications in ferroelectric random-access memories 22,23 and piezoelectric sensors. 24 Hexagonal ABC semiconductors (with space group P6 3 mc) are a valuable class of ferroelectric, 25 hyperferroelectric, 26 and piezoelectric materials.…”

Implementing Boolean Logic in Ferroelectric Field‐Effect Transistors

“…Emerging memories have speed advantages and are non-volatile, which implies that they not only have potential to compete with current flash memories, but also play an important role in computing in memory, the technique integrating computing and storage in one device. [9][10][11][12][13][14][15] Because of short access time, low power consumption, and compatibility with advance fabrication, the FeRAM integrated with the transistor, so-called FeFET, becomes the most potential candidate in terms of emerging memory. Although many studies have implemented Boolean logic in a one-transistor-one-resistor (1T1R) device using resistive random access memory as the resistor, [7][8][9][10] there are still many constraints in the operation of these devices, such as different logic gates requiring different input terminals or different readout parameters.…”