Promising Materials and Synthesis Methods for Resistive Switching Memory Devices: A Status Review

Abstract

In recent years, the emergence of memory devices, especially resistive random-access memories (RRAM), has been a front-runner in many technological applications. This is due to its high-speed operation, structural simplicity, low power consumption, scalability potential, and high-density memory storage features. To develop an efficient and miniaturized memory device based on the resistive switching effect, it is necessary to study the range of materials and their fabrication techniques. In this review article, we have summarized the diverse organic and inorganic materials and their resistive switching performance. Furthermore, we reviewed some potential materials for next-generation resistive switching devices. In the resistive switching device fabrication front, numerous physical, chemical, and biological-based synthesis techniques were briefly reviewed. The influence of preparative parameters was also discussed. Finally, the current status and future directions of this field are discussed. The present review article provides important details of the resistive switching effect, promising organic and inorganic materials, and various fabrication techniques to improve the device's performance for memory applications.

Resistive Memory-Switching Behavior in Solution-Processed Trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) Benzene–PVA-Composite-Based Aryl Acrylate on ITO-Coated PET

“…This could be due to either the nanobattery effect [ 32 ] or the co-existence of capacitive, resistance, and inductive effects [ 33 ]. This could be due to structural rearrangement during this type of applied voltage and the orientation of charge carriers [ 33 , 34 , 35 ]. Majumdar et al [ 36 ] suggested that a charge stored in the conjugated polymer near the electrode/polymer interface is the main contributor to charge injection and, hence, the non-zero minima in the I–V characteristic [ 36 ].…”

“…This could be due to either the nanobattery effect [32] or the co-existence of capacitive, resistance, and inductive effects [33]. This could be due to structural rearrangement during this type of applied voltage and the orientation of charge carriers [33][34][35]. Majumdar et al The contribution of I d is due to voltage variation (first term) and capacitance variation (second term).…”

Electrochemical anodic oxidation assisted fabrication of memristors

“…Due to their good endurance and non-volatility, memristors made of binary metal oxides such as titanium oxide [23], hafnium oxide [24,25], and tantalum oxide [26,27], are commonly referred to as resistive random access memories (ReRAMs). With the advantages of simple architecture, high-density scalability, low power consumption, good compatibility with the CMOS technique, and multi-level storage [28][29][30][31][32], ReRAMs are key candidates for the next generation non-volatile memories (NVMs) [33,34]. For NVM applications, memristors require excellent endurance and retention, good yield, on/off ratio and linearity [35,36].…”

Effect of long chain fatty acids on the memory switching behavior of tetraindolyl derivatives

“…Such devices possess two stable states – (i) low conducting OFF state or high resistance state (HRS) and (ii) high conducting ON state or low resistance state (LRS). 8,13,14 This allows the application of RS devices towards memory concepts. 8 Two resistance states HRS and LRS considered as binary “0” and “1”.…”