2019
DOI: 10.7567/1882-0786/ab09a8
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Promoting control of antiferromagnet-induced perpendicular magnetic anisotropy in magnetic multilayers: Effects of applying in-plane magnetic supporting layers

Abstract: We report that antiferromagnet-induced perpendicular magnetic anisotropy (PMA) occurring in magnetic thin films can be effectively controlled by applying ultrathin in-plane magnetic supporting layers with high ferromagnetic ordering temperature through magnetic proximity effects. In a series of epitaxially grown 12-ML Ni/Co/Mn/Co/Cu(001) films, we observed that the PMA of the top 12-ML Ni/Co films and the long-range antiferromagnetic ordering of Mn film were enhanced concurrently with the establishment of ferr… Show more

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“…Two phased magnetic materials have been largely explored since long in magnetic academia for their impending applications in new logical and memory devices [1][2][3]. Perpendicular magnetic anisotropy (PMA) in such materials is a pre-requisite for enhancing the areal density in magnetic storage such as in hard disk drives for long time storage and random access memories such as heat-assisted magnetic recording and spintransfer-torque based magnetic random access memories for temporary storage in computer systems [4,5].…”
Section: Introductionmentioning
confidence: 99%
“…Two phased magnetic materials have been largely explored since long in magnetic academia for their impending applications in new logical and memory devices [1][2][3]. Perpendicular magnetic anisotropy (PMA) in such materials is a pre-requisite for enhancing the areal density in magnetic storage such as in hard disk drives for long time storage and random access memories such as heat-assisted magnetic recording and spintransfer-torque based magnetic random access memories for temporary storage in computer systems [4,5].…”
Section: Introductionmentioning
confidence: 99%