2024
DOI: 10.1016/j.scriptamat.2023.115807
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Promoting spin-polarized states in Bi/Si(111) interface mediated by Ba intercalation for advanced spintronics applications

Alexey N. Mihalyuk,
Yuriy E. Vekovshinin,
Alexandra Y. Tupchaya
et al.
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(1 citation statement)
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“…The discovery, characterization and control of electronic properties in low-dimensional materials reduced down to the atomic-scale limit are of special interest for nanoelectronics due to a number of fascinating effects such as unconventional superconductivity, 1 non-trivial topology, 2 flat bands, 3 the topological Hall effect, 4 strong spin–orbit coupling effects induced by the integration of heavy quasiparticles 5 or interface engineering, 6,7 highly anisotropic spin-polarized states 8–10 and other emergent effects promising for versatile applications in the nanotechnology industry. 11–13 It is noteworthy that spin–orbit coupling (SOC) plays a decisive role in many electronic effects observed in quantum materials.…”
Section: Introductionmentioning
confidence: 99%
“…The discovery, characterization and control of electronic properties in low-dimensional materials reduced down to the atomic-scale limit are of special interest for nanoelectronics due to a number of fascinating effects such as unconventional superconductivity, 1 non-trivial topology, 2 flat bands, 3 the topological Hall effect, 4 strong spin–orbit coupling effects induced by the integration of heavy quasiparticles 5 or interface engineering, 6,7 highly anisotropic spin-polarized states 8–10 and other emergent effects promising for versatile applications in the nanotechnology industry. 11–13 It is noteworthy that spin–orbit coupling (SOC) plays a decisive role in many electronic effects observed in quantum materials.…”
Section: Introductionmentioning
confidence: 99%