Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD

Strain relaxation of Si0.75Ge0.25in hydrogen-implanted Si0.75Ge0.25/B-doped Si0.70Ge0.30/Si heterostructure

“…8) However, for most of the growth techniques, the relaxation degree is insufficient, even if the SiGe layer thickness is much larger than the critical thickness for strain relaxation. 9) As reported in Ref. 10, aggregation of over-pressurized H bubbles can contribute to strain relaxation and reduce the threading dislocation density through interactions with dislocation loops.…”