Propagation of misfit dislocations from AlN/Si interface into Si

Abstract

a b s t r a c tA substantial improvement of the structural quality of GaN/AlN grown on He implanted Si has been described. Many misfit dislocations were redirected from the Al/Si interface and propagated to the Si substrate due to the formation of He bubbles in the substrate. Growth temperature of GaN/AlN was chosen to be the annealing temperature necessary for He bubble formation. The dependence on the He fluence, distance of He bubbles from the Si surface and cleaning procedure of the Si before growth have been described. The structural perfection of the GaN/AlN layers was compared to the layers grown on un-implanted Si.

Third-Order Nonlinear Spectrum of GaN under Femtosecond-Pulse Excitation from the Visible to the Near Infrared

“…The wide-bandgap direct-gap semiconductor gallium nitride (GaN) is well-known for its excellent electronic and linear optical properties [1][2][3] that have resulted in a large variety of electronic and optoelectronic applications, such as light-emitting diodes (LEDs) [4], field-effect transistors (FETs) [5,6], and high-temperature electronic devices [7]. Throughout the years, outstanding expertise in crystal growth [8,9] and post-processing [10][11][12][13] of GaN samples has been developed, enabling the production of complex integratable structures.…”