Propagation of ultrasonic waves in bulk gallium nitride (GaN) semiconductor in the presence of high-frequency electric field

Mensah, S. Y.; Mensah, N. G.; Elloh, V.W.; Banini, G.K.; Sam, Frederick; Allotey, F.K.A.

doi:10.1016/j.physe.2005.05.050

Cited by 14 publications

(7 citation statements)

References 13 publications

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“…Increased RF power may also increase the Q due to the same mechanism as the DC bias: an interaction with RF current and the phonons, improving the acoustic performance. This is in effect, a self-actuation mechanism due to the RMS value of the RF current interacting with the acoustic phonons 33 . This change is significantly lower than the improvement seen with increasing DC bias ( Fig.…”

Section: Resultsmentioning

confidence: 99%

“…This dynamic and reversible improvement in the Q of PS-BAW resonators can be distinctly observed on applying a DC electric field. Experimental work presented here has focused on GaN as it is a high-quality acoustic PS material predicted to be optimal for demonstrating acoustoelectric amplification 28 33 . Measured results presented here verify these predictions.…”

Section: Discussionmentioning

confidence: 99%

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Phonon-Electron Interactions in Piezoelectric Semiconductor Bulk Acoustic Wave Resonators

Gokhale

Rais‐Zadeh

2014

Sci Rep

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This work presents the first comprehensive investigation of phonon-electron interactions in bulk acoustic standing wave (BAW) resonators made from piezoelectric semiconductor (PS) materials. We show that these interactions constitute a significant energy loss mechanism and can set practical loss limits lower than anharmonic phonon scattering limits or thermoelastic damping limits. Secondly, we theoretically and experimentally demonstrate that phonon-electron interactions, under appropriate conditions, can result in a significant acoustic gain manifested as an improved quality factor (Q). Measurements on GaN resonators are consistent with the presented interaction model and demonstrate up to 35% dynamic improvement in Q. The strong dependencies of electron-mediated acoustic loss/gain on resonance frequency and material properties are investigated. Piezoelectric semiconductors are an extremely important class of electromechanical materials, and this work provides crucial insights for material choice, material properties, and device design to achieve low-loss PS-BAW resonators along with the unprecedented ability to dynamically tune resonator Q.

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Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Phonon-Electron Interactions in Piezoelectric Semiconductor Bulk Acoustic Wave Resonators

Gokhale

Rais‐Zadeh

2014

Sci Rep

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“…The fact that graphene has unique energy spectrum may be responsible for the oscillations of the physical observables. This unusual feature is missing in conventional semiconductors [10] and two dimensional electron gas (2DEG) systems.…”

Section: Velocity and Attenuation Change With Frequencymentioning

confidence: 99%

“…Obtaining exact solution to these complex coupled Equations (10) and (11) is often difficult. Usually, the problem is well handled by adopting simplifying small signal approximations.…”

mentioning

confidence: 99%

Generation and Propagation of Ultrasonic Waves in Piezoelectric Graphene Nanoribbon

Musah

Mensah²,

Abukari³

et al. 2013

OJA

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Generation and propagation of ultrasonic waves in single layer Graphene Nanoribbon is studied using semi-classical approach. When piezoelectric Graphene Nanoribbon (GNR) is exposed to time varying light beam, ultrasonic waves are produced which propagate in the medium. At low frequencies, we observed oscillations of the ultrasonic observables, velocity change and attenuation which are characteristics of massless Dirac fermions in graphene. Exploiting this oscillatory behavior, we estimate graphene's electronic mobility to be around 5 2 10 cm V s . Propagating ultrasonic waves can be amplified, depending on the electric field amplitude. Specifically, amplification occurs when drift velocity exceeds sound velocity. This scheme can be employed for efficient ultrasonic amplifier device operation.

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“…When electron drift induced by external electric field exceeds the sound velocity (i.e., ϑ 0 > ϑ s ), the acoustic wave amplification occurs due to phonon emission by carriers [13][14][15]. Motivated by this, a number of researchers worked in this direction and explored various methods of acoustic amplification in different semiconductors [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Phonon-Plasmon Interactions in Inhomogeneous Semiconductor Plasma Embedded with Nanoparticle Cluster

Ghosh

Dubey

2018

Acta Phys. Pol. A

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Phonon-plasmon interaction in inhomogeneous piezosemiconductor embedded with a nanoparticle cluster is examined using hydrodynamic model of plasma and macroscopic model of piezoelectric media. Present work dealt with the extensive investigation of acoustic wave amplification characteristics. The effects of density gradient δ and non-dimensional parameter l related to nanoparticle cluster on acoustic gain have been studied with varying medium electron density n0e, wave frequency ω and velocity ratio ϑ0/ϑs. The results so obtained, infer that the varying inhomogeneity and presence of nanoparticle cluster within the semiconductor plasma medium play decisive role in depicting the gain characteristics of acoustic wave.

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Propagation of ultrasonic waves in bulk gallium nitride (GaN) semiconductor in the presence of high-frequency electric field

Cited by 14 publications

References 13 publications

Phonon-Electron Interactions in Piezoelectric Semiconductor Bulk Acoustic Wave Resonators

Phonon-Electron Interactions in Piezoelectric Semiconductor Bulk Acoustic Wave Resonators

Generation and Propagation of Ultrasonic Waves in Piezoelectric Graphene Nanoribbon

Phonon-Plasmon Interactions in Inhomogeneous Semiconductor Plasma Embedded with Nanoparticle Cluster

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