Properties and mechanisms of iodine doped of P3HT and P3HT/PCBM composites

Lee, Harold O.; Sun, Sam-Shajing

doi:10.3934/matersci.2018.3.479

Cited by 15 publications

(4 citation statements)

References 18 publications

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“…26,27 A slight dip at all temperatures for the 0.5% samples suggests further investigation may be necessary to further understand the impact of iodine doping on the mobility of the P3HT and iodine binary system. Previous work with a P3HT, iodine, and PCBM ternary dual-functional photoelectric-thermoelectric system revealed a peak conversion efficiency in samples doped with 5% mole ratio iodine 28 , but the primary direction of charge transport differs between those reported solar cell devices (z-axis) and the OFETs reported here (x-y plane). The general trend downward at 1% for both on-off ratio and mobility suggests further focus of this study should be directed toward doping concentrations of 0.25% and 0.5%.…”

Section: Optimization Of Doping Concentration Rangecontrasting

confidence: 56%

A Thermoelectric Polymer Field-effect Transistor via Iodine-doped P3HT

Norman,

Sun

2023

Preprint

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Doping can alter the electronic and thermoelectric attributes of an organic semiconductor system. These alterations can enable viable tunable devices that have applications in temperature sensing for environmental controls. Here we demonstrate a dual-modulation organic field-effect transistor (OFET) where temperature effectively modulates the current-voltage characteristics of the OFET and gate voltage modulates the thermoelectric properties of the active layer. Poly(3-hexylthiophene-2,5-diyl) (P3HT) was utilized as the host donor polymer, iodine was utilized as the dopant acceptor molecule Finished devices were characterized by a semiconductor analyzer system with temperature controlled by two thermoelectric cooling plates. The doping of iodine in the range of 0.25% to 0.5% mole ratio with respect to the P3HT exhibited the greatest on-off ratio of the investigated dopant concentrations. Iodine doping concentrations of 0.5% mole ratio or less can greatly improve the thermoelectric properties of a binary P3HT-based system and the current-voltage performance of the dual-modulation device.

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Section: Optimization Of Doping Concentration Rangecontrasting

confidence: 56%

A Thermoelectric Polymer Field-effect Transistor via Iodine-doped P3HT

Norman,

Sun

2023

Preprint

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“…Saturated device mobility values are presented in Figure 5c, and, similarly, exhibit maximums for each of the three tested temperatures for the 0.25% sample. The apparent device mobility (also called FET mobility) increases with temperature in both undoped and iodine-doped devices, as expected for temperature-dependent mobility behavior as well as thermoelectric doping-generated charges [32,33]. A slight dip at all temperatures for the 0.5% samples suggests further investigation may be necessary to further understand the impact of iodine doping on the mobility of the P3HT and iodine binary system.…”

Section: Optimization Of Doping Concentration Rangementioning

confidence: 56%

A Thermoelectric Polymer Field-Effect Transistor via Iodine-Doped P3HT

Norman,

Sun

2024

Micromachines

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Doping can alter certain electronics, including the thermoelectric properties of an organic semiconductor. These alterations may enable viable tunable devices that could be useful in temperature sensing for autonomous controls. Here, we demonstrate a dual-modulation organic field-effect transistor (OFET) where temperature can modulate the current-voltage characteristics of the OFET and gate voltage can modulate the thermoelectric properties of the active layer in the same device. Specifically, Poly(3-hexylthiophene-2,5-diyl) (P3HT) was utilized as the host p-type semiconducting polymer, and iodine was utilized as the thermoelectric minority dopant. The finished devices were characterized with a semiconductor analyzer system with temperature controlled using two thermoelectric cooling plates. The FETs with iodine doping levels in the range of 0.25% to 0.5% mole ratio with respect to the P3HT exhibit the greatest on/off ratios. This study also observed that P3HT thin film samples with an intermediate iodine doping concentration of 0.25% mole ratio exhibit an optimal thermoelectric power factor (PF).

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“…This work demonstrates the fabrication of a triboelectric Nanogenerator using PVDF and PET as triboelectric layers. Second, the focus of this study is on the layer-by-layer manufacturing of PVDF doped with iodine and PET [3,4]. Because of its charge transfer capability, iodine doped PVDF contributes significantly to higher output power when compared to other doping materials.…”

Section: Fig 1 Triboelectric Nanogenerator Setup With Iodine Doped Pv...mentioning

confidence: 99%

Performance enhancement of triboelectric nanogenerator using iodine doped PVDF

Phogaat¹,

Yepuri²

2023

Nanosystems: Phys. Chem. Math.

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Because of the rapid improvement of energy collecting technologies, unique mechanical devices have been created. As a result of the energy problems, however, researchers began to create new procedures and strategies for storing as much energy as feasible. Nanotechnology is unique, and it spurred the invention of Triboelectric Nanogenerators (TENGs), which are employed as a source of energy in wearables by transforming mechanical energy into electrical energy. This article discusses TENG, which is a triboelectric material made from Polyvinylidene fluoride (PVDF) and aluminium (Al). TENG may be made in two ways: with PVDF alone or with iodine doped PVDF, with Al staying the same in the both cases. Despite the fact that the materials are triboelectric, aluminium electrodes are utilised to attach to the materials, which are created on a plastic substrate using a thermal evaporator and taped together. The existence of PVDF was verified by the Fourier transform infrared spectroscopy (FTIR) examinations, which revealed high absorption peaks at 723 cm −1 and 849 cm −1 , respectively. The digital storage oscilloscope (DSO) and pico-ammeter (10-12 m) measurements of the TENG device's output voltage and current yielded results of 25V and 8 pA, respectively. Additionally, this study reveals the power density produced and the distinctiveness of this TENG device, both of which are critical to the efficiency and applicability of TENG in a new generation of electronics.

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Properties and mechanisms of iodine doped of P3HT and P3HT/PCBM composites

Cited by 15 publications

References 18 publications

A Thermoelectric Polymer Field-effect Transistor via Iodine-doped P3HT

A Thermoelectric Polymer Field-effect Transistor via Iodine-doped P3HT

A Thermoelectric Polymer Field-Effect Transistor via Iodine-Doped P3HT

Performance enhancement of triboelectric nanogenerator using iodine doped PVDF

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