2008
DOI: 10.1016/j.intermet.2008.04.017
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Properties and phase transition of (Ti,Al)N thin films prepared by ion beam-assisted deposition

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Cited by 10 publications
(3 citation statements)
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“…Single-layer and multilayer TiN-based coatings and nanocrystalline coatings [123][124] have been deposited using IBAD [117][118][119][120][121][122].…”
Section: Physical Vapor Deposition (Pvd) Techniquesmentioning
confidence: 99%
“…Single-layer and multilayer TiN-based coatings and nanocrystalline coatings [123][124] have been deposited using IBAD [117][118][119][120][121][122].…”
Section: Physical Vapor Deposition (Pvd) Techniquesmentioning
confidence: 99%
“…Although they have relatively resistance [5][6][7][8][9][10], the high temperature oxidation research of high hardness, certain wear resistance or corrosion the coating is still no enough. Gradually increasing number of researches begin to focus on preparing multi-component ceramic coating such as Ti(C, N), (Ti, Al)N, (Ti, Cr)N and (Ti, Zr)N to improve the oxidation performance [11][12][13].The experiment developed a novel multi-components ceramic coating (Ti, Al)C on the surface of carbon steel using EDC by adding aluminum element with better high temperature oxidation resistance to the titanium electrode which was made through a special sintering process, and meanwhile, the structure, composition, phase of the coating were represented and high-temperature oxidation and tribological performance of the coating was primarily investigated.…”
Section: Introductionmentioning
confidence: 99%
“…Depositions at lower temperatures induce a Ti 2 AlN growth with the c-axis tilted away from the substrate normal, accompanied by a polycrystalline film morphology and surface roughening [3]. Polycrystalline Ti 2 AlN does also form by solid-state reaction during annealing of AlN/Ti diffusion couples, with somewhat conflicting results depending on form of reactant, temperature and characterization methods [4], Ti 1-x Al x N films on Al [5] and TiN/TiAl(N) multilayers [6]. On the contrary, phase-pure basal-plane oriented epitaxial Ti 2 AlN(0001) films can be obtained during annealing of already c-axis oriented AlN(0001)/Ti(0001) bilayer templates at temperatures as low as 500 °C [7].…”
Section: Introductionmentioning
confidence: 99%