Properties of 1.0-MeV-Electron-Irradiated Defect Centers in Silicon

Walker, John W.; Sah, C. T.

doi:10.1103/physrevb.7.4587

Cited by 128 publications

(38 citation statements)

References 54 publications

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“…The energy position of the measured defects are in agreement with point defects described in the literature as vacancy complexes, such as vacancy-P, 6 vacancy-O, 6 and divacancy complex, 7 as indicated by the labels in Fig. 7a and b.…”

Section: Resultssupporting

confidence: 70%

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Point defects generated by direct-wafer bonding of silicon

Dózsa

Szentpali

Pasquariello

et al. 2002

Journal of Elec Materi

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High-purity float zone (FZ) silicon p-and n-type wafers were directly bonded hydrophobically at 700°C and 1050°C. Electrical I-V and capacitance-voltage (C-V) characterization was performed on p-n junctions of 2-mm square chips cut out from properly bonded areas of the wafers. The point defects were investigated by Deep Level Transient Spectroscopy (DLTS). As expected, annealing at 700°C resulted in high void density, while at 1050°C void-free bonded structures were formed. The I-V characteristics were dominated by recombination at the bonded interface and by the resistance of the n-type wafer. The point defects identified by DLTS are divacancy, vacancy-phosphor, and vacancy-oxygen complexes. These defects explain qualitatively the observed characteristics of the samples.

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Section: Resultssupporting

confidence: 70%

“…The Arrhenius plots of the measured DLTS peaks are within the experimental error of published data of vacancy complexes Vac-P, 6 Vac-Vac, 7 and Vac-O. 6 After annealing at 1050°C, the DLTS peak shape suggests the formation of dislocations or precipitates.…”

Section: Discussionmentioning

confidence: 56%

Point defects generated by direct-wafer bonding of silicon

Dózsa

Szentpali

Pasquariello

et al. 2002

Journal of Elec Materi

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“…Based on the literature [13,14,15,16,17,18,19,20,21], the trap densities introduced by 1 MeV neutrons and 10 MeV electrons have been estimated with two established assumptions: the electron trap density is a linear function of dose, and the dose is a linear function of fluence. A summary is given in Table 2.…”

Section: Simulatormentioning

confidence: 99%

Simulations of the Temperature Dependence of the Charge Transfer Inefficiency in a High-Speed CCD

Sopczak

Bekhouche

Bowdery

et al. 2007

IEEE Trans. Nucl. Sci.

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Results of detailed simulations of the charge transfer inefficiency of a prototype serial readout CCD chip are reported. The effect of radiation damage on the chip operating in a particle detector at high frequency at a future accelerator is studied, specifically the creation of two electron trap levels, 0.17 eV and 0.44 eV below the bottom of the conduction band. Good agreement is found between simulations using the ISE-TCAD DESSIS program and an analytical model for the former level but not for the latter. Optimum operation is predicted to be at about 250 K where the effects of the traps is minimal; this being approximately independent of readout frequency in the range 7-50 MHz. The work has been carried out within the Linear Collider Flavour Identification (LCFI) collaboration in the context of the International Linear Collider (ILC) project. Results of detailed simulations of the charge transfer inefficiency of a prototype serial readout CCD chip are reported. The effect of radiation damage on the chip operating in a particle detector at high frequency at a future accelerator is studied, specifically the creation of two electron trap levels, 0.17 eV and 0.44 eV below the bottom of the conduction band. Good agreement is found between simulations using the ISE-TCAD DESSIS program and an analytical model for the former level but not for the latter. Optimum operation is predicted to be at about 250 K where the effects of the traps is minimal; this being approximately independent of readout frequency in the range 7-50 MHz. The work has been carried out within the Linear Collider Flavour Identification (LCFI) collaboration in the context of the International Linear Collider (ILC) project.

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“…The mechanism of creating traps has been discussed in the literature, for example in Refs. [17]- [19]. These traps result in charge transfer inefficiency.…”

Section: Introductionmentioning

confidence: 99%

Measurements of Charge Transfer Inefficiency in a CCD With High-Speed Column Parallel Readout

Sopczak

Bekhouche

Damerell

et al. 2009

IEEE Trans. Nucl. Sci.

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Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived particles. The Linear Collider Flavour Identification (LCFI) collaboration is developing Column-Parallel CCDs (CPCCDs) for the vertex detector of a future Linear Collider. The CPCCDs can be read out many times faster than standard CCDs, significantly increasing their operating speed. A test stand for measuring the charge transfer inefficiency (CTI) of a prototype CPCCD has been set up. Studies of the CTI have been performed at a range of readout frequencies and operating temperatures. Abstract-Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying shortlived particles. The Linear Collider Flavour Identification (LCFI) collaboration is developing Column-Parallel CCDs (CPCCDs) for the vertex detector of a future Linear Collider. The CPCCDs can be read out many times faster than standard CCDs, significantly increasing their operating speed. A test stand for measuring the charge transfer inefficiency (CTI) of a prototype CPCCD has been set up. Studies of the CTI have been performed at a range of readout frequencies and operating temperatures.

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Properties of 1.0-MeV-Electron-Irradiated Defect Centers in Silicon

Cited by 128 publications

References 54 publications

Point defects generated by direct-wafer bonding of silicon

Point defects generated by direct-wafer bonding of silicon

Simulations of the Temperature Dependence of the Charge Transfer Inefficiency in a High-Speed CCD

Measurements of Charge Transfer Inefficiency in a CCD With High-Speed Column Parallel Readout

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