“…5 This dielectric is a homogeneous material that is part-SiO 2 and part-silicone polymer. 6,7 Here we present evidence that employing the new gate dielectric also results in a-Si: H TFTs with unusually high effective electron field-effect mobility eff,e , and comparatively high hole field-effect mobility eff,h . For clarity we distinguish between the free electron ͑e͒ and free hole ͑h͒ mobilities in the bands, 0,e and 0,h , the time-of-flight ͑TOF͒ drift mobilities d,e and d,h , the intrinsic field-effect mobilities int,e and int,h , and the effective field-effect mobilities eff,e and eff,h .…”