Properties of a-Si:H and a-(Si,Ge):H solar cells prepared using ECR deposition techniques

Dalal, Vikram L.; Maxson, Tim; Han, Kay

doi:10.1109/pvsc.1997.654184

Cited by 2 publications

(3 citation statements)

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“…The growth chemistry is very important for the quality of the material [35][36][37][38][39][40][41]. A good growth mechanism will result in a better material.…”

Section: Growth Chemistrymentioning

confidence: 99%

“…If we use high hydrogen dilution, then reaction 1 and 4 are predominant and XH3 will be the major radical. Besides, hydrogen has other effects during the growth: passivate the dangling bonds, etch the surface hydrogen, break ihe weaker Si-Si and Ge-Ge bonds (etching during growth) etc [35][36][37][38][39][40][41].…”

Section: Growth Chemistrymentioning

confidence: 99%

“…It has been shown in Haroon's thesis [27] that low pressure will lead to better quality of the material because of higher ion bombardment. S. Haroon and V. Dalai [36][37][38] showed that the a-(Si,Ge):H films and devices grown at low pressure under hydrogen plasma had better quality. Optical and electronic properties , including bandgap, Urbach energy and moblity-lifetime for both electrons and holes were found to be greatly improved at low pressure.…”

Section: Pressurementioning

confidence: 99%

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Low bandgap α-(Si,Ge):H and α-(Ge):H devices

Zhou

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“…The growth chemistry is very important for the quality of the material [35][36][37][38][39][40][41]. A good growth mechanism will result in a better material.…”

Section: Growth Chemistrymentioning

confidence: 99%