Properties of Al heavy-doped ZnO thin films by RF magnetron sputtering

Li, L.J.; Hong, Dunpin; Dai, Liping; Chen, J.J.; Yuan, Qinqin; Li, Y.

doi:10.1016/j.materresbull.2007.06.042

Cited by 51 publications

(13 citation statements)

References 14 publications

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“…Furthermore, at higher doping concentrations, the nuclear charge of Al ?3 arrests more oxygen than Zn ?2 because Al ?3 is larger than Zn ?2 . Thus, the hexagonal structure and crystallinity of the thin films were decreased (Li et al 2008).…”

Section: Morphological and Structural Propertiesmentioning

confidence: 98%

The effect of dopant concentration on properties of transparent conducting Al-doped ZnO thin films for efficient Cu2ZnSnS4 thin-film solar cells prepared by electrodeposition method

et al. 2015

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Al-doped ZnO (AZO) thin films were potentiostatically deposited on indium tin oxide substrates. The influence of the doping level of the ZnO:Al films was investigated. The results of the X-ray diffraction and scanning electron microscopy analysis revealed that the structural properties of the AZO films were found polycrystalline with a hexagonal wurtzite-type structure along the (002) plane. The grain size of the AZO films was observed as approximately 3 lm in the film doping with 4 mol% ZnO:Al concentration. The thin films also exhibited an optical transmittance as high as 90 % in the wavelength range of 100-1,000 nm. The optical band gap increased from 3.33 to 3.45 eV. Based on the Hall studies, the lowest resistivity (4.78 9 10-3 X cm) was observed in the film doping with 3 mol% ZnO:Al concentration. The sheet resistant, carrier concentration and Hall mobility values were found as 10.78 X/ square, 9.03 9 10 18 cm-3 and 22.01 cm 2 /v s, respectively, which showed improvements in the properties of AZO thin films. The ZnO:Al thin films were used as a buffer layer in thin-film solar cells with the structure of soda-lime glass/Mo/Cu 2 ZnSnS 4 /ZnS/ ZnO/Al grid. The best solar cell efficiency was 2.3 % with V OC of 0.430 V, J SC of 8.24 mA cm-2 and FF of 68.1 %.

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Section: Morphological and Structural Propertiesmentioning

confidence: 98%

The effect of dopant concentration on properties of transparent conducting Al-doped ZnO thin films for efficient Cu2ZnSnS4 thin-film solar cells prepared by electrodeposition method

et al. 2015

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“…Transparent conducting, aluminum doped zinc oxide thin films (Al x Zn y O z , ZnO:Al) [ 37 , 38 ] contain about 2% wt aluminum and can be produced with spray pyrolysis [ 39 , 40 , 41 , 42 , 43 , 44 ], sol gel technology [ 45 , 46 , 47 , 48 , 49 , 50 , 51 ], electro deposition [ 52 , 53 ], vapor phase deposition [ 54 , 55 ], magnetron DC sputtering [ 56 , 57 , 58 , 59 , 60 ], magnetron RF sputtering [ 61 , 62 , 63 , 64 ] or a combination of both the sputter deposition methods [ 65 , 66 , 67 , 68 , 69 , 70 , 71 , 72 , 73 , 74 , 75 , 76 , 77 , 78 , 79 , 80 , 81 , 82 ]. Moreover, high quality deposition methods using thermal plasmas [ 83 , 84 ], (low pressure (LP), me...…”

Section: Transparent Conducting Oxides (Tcos)mentioning

confidence: 99%

Transparent Conducting Oxides—An Up-To-Date Overview

2012

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Transparent conducting oxides (TCOs) are electrical conductive materials with comparably low absorption of electromagnetic waves within the visible region of the spectrum. They are usually prepared with thin film technologies and used in opto-electrical apparatus such as solar cells, displays, opto-electrical interfaces and circuitries. Here, based on a modern database-system, aspects of up-to-date material selections and applications for transparent conducting oxides are sketched, and references for detailed information are given. As n-type TCOs are of special importance for thin film solar cell production, indium-tin oxide (ITO) and the reasonably priced aluminum-doped zinc oxide (ZnO:Al), are discussed with view on preparation, characterization and special occurrences. For completion, the recently frequently mentioned typical p-type delafossite TCOs are described as well, providing a variety of references, as a detailed discussion is not reasonable within an overview publication.

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“…According to the mechanisms proposed there, we can assign the 420 nm band to the transitions from the interstitial Zn (Zn i ) energy level to the valence band, while the existence of extended Zn i levels account for the peak at 445 nm (2.78 eV). The band positioned at 485 nm (2.55 eV) is close to values of 2.57 eV [52] and 2.64 eV [53], respectively, associated with the energy difference between Zn i and zinc vacancy (V Zn ) levels. We can see that these three bands in the UV-blue and blue-green regions are all linked to the presence of Zn i .…”

Section: Chemical Composition Morphology Optical and Electrical Promentioning

confidence: 66%

Improving the uncommon (110) growing orientation of Al-doped ZnO thin films through sequential pulsed laser deposition

Coman

Ursu²,

Nica

et al. 2014

Thin Solid Films

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Properties of Al heavy-doped ZnO thin films by RF magnetron sputtering

Cited by 51 publications

References 14 publications

The effect of dopant concentration on properties of transparent conducting Al-doped ZnO thin films for efficient Cu2ZnSnS4 thin-film solar cells prepared by electrodeposition method

The effect of dopant concentration on properties of transparent conducting Al-doped ZnO thin films for efficient Cu2ZnSnS4 thin-film solar cells prepared by electrodeposition method

Transparent Conducting Oxides—An Up-To-Date Overview

Improving the uncommon (110) growing orientation of Al-doped ZnO thin films through sequential pulsed laser deposition

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