Properties of AlN thin film as dielectric for Au/Ti/n-Si device

Abstract

The purpose of this study is to investigate the electric and dielectric properties of Au/Ti/AlN/n-Si device with using admittance measurements. Aluminum nitride (AlN) epitaxial template on n-Si substrate was deposited by a hydride vapor phase epitaxy (HVPE) technique. Au/Ti contact was thermally evaporated on AlN thin film. Thus, admittance measurements (Y=G+iωC) of the fabricated device were performed and analyzed for frequencies ranging from 1 kHz to 1000 kHz and at room temperature. The capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics shown a strong frequency dependence. This behavior is associated with the reaction of the interface traps to the applied ac signal. Also, the dielectric parameters, conductivity, and electric modulus of the device were extracted from capacitance and conductance data. The obtained results suggest that the prepared device can be used as a capacitor in electronic circuits.