2008
DOI: 10.1016/j.tsf.2007.05.064
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Properties of aluminum oxide thin films deposited by pulsed laser deposition and plasma enhanced chemical vapor deposition

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Cited by 91 publications
(41 citation statements)
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“…Ra values between 5 and 11 nm were found as O 2 % was changed from 0 to 25%. These results are slightly higher than the reported by Cibert and co-workers 9 for the roughness of alumina films deposited at room temperature on silicon substrates using the PECVD technique. The rising trend in Ra is ascribed to two primary effects.…”
Section: Wavenumbercontrasting
confidence: 64%
See 1 more Smart Citation
“…Ra values between 5 and 11 nm were found as O 2 % was changed from 0 to 25%. These results are slightly higher than the reported by Cibert and co-workers 9 for the roughness of alumina films deposited at room temperature on silicon substrates using the PECVD technique. The rising trend in Ra is ascribed to two primary effects.…”
Section: Wavenumbercontrasting
confidence: 64%
“…Cibert et al 9 deposited films by PLD (Pulsed Laser Deposition) and PECVD at room temperature and 800 °C. Trimethylaluminium (TMA), used as the precursor, was admitted to the reaction chamber by a flow of argon passing through it.…”
Section: Introductionmentioning
confidence: 99%
“…1a is generally attributed to unresolved Al-O-Al bending (650-700 cm -1 ) and Al-O stretching (750-850 cm -1 ) bands. [162][163][164][165][166][167] Alternatively, the Al 2 O 3 FTIR absorption band in this range can be interpreted in terms of the Al coordination where the stretching modes for AlO 6 octahedra are expected at 500-750 cm -1 whereas the stretching modes for AlO 4 tetrahedra are expected at 750-850 cm -1 . 154,155 From this perspective, the broad nature for the Al-O absorption band in Fig.…”
Section: Elemental Composition-mentioning
confidence: 99%
“…Al 2 O 3 film can be fabricated by several methods, including chemical vapor deposition [2], electron beam evaporation [3], magnetron sputtering [4], the sol-gel process [5], pulsed laser deposition [6], and atomic layer deposition [7]. Among these techniques, Atomic Layer Deposition (ALD), a low-temperature atomic chemical vapor deposition technique, has advantages in homogeneity, compactness, precise composition, and thickness controllability of the target material onÅgstrom or monolayer level [8,9].…”
Section: Introductionmentioning
confidence: 99%