Polycrystalline silicon films with a rugged surface (rugged poly-Si), deposited by a
single-wafer rapid thermal chemical vapor deposition (RTCVD) system suitable for 12
inch wafer fabrication, are studied and the films have been successfully applied to bottom
storage electrodes for stacked capacitors in dynamic random access memory cells. Our
data show that the rugged poly-Si is actually formed by the nucleation generation on the
amorphous silicon surface and subsequent crystalline growth during the annealing step
following deposition. We also determined that a wide temperature window exists for the
formation of rugged poly-Si (i.e., ±15°C) using RTCVD, which is wider than that using
low pressure chemical vapor deposition (LPCVD) (i.e., ±3°C) and ultra high vacuum
chemical vapor deposition (UHVCVD) (i.e., ±10°C). Stacked capacitors fabricated
using rugged poly-Si and thin silicon oxide/silicon nitride dielectric film show that for a
rugged poly-Si storage electrode with a 60 nm top-layer and 645°C annealing, an
effective surface area of approximately 2.9 times that of a conventional poly-Si film
electrode is obtained.