Properties of amorphous tin-doped indium oxide thin films deposited by O2/Ar mixture ion beam-assisted system at room temperature

The effect of deposition rate on electrical, optical and structural properties of tin-doped indium oxide (ITO) films on glass at low substrate temperature

“…Among the existing TCOs, indium tin oxide (ITO) is one of the most frequently used materials, because of its unique characteristics such as good conductivity, high optical transmittance over the visible wavelength region and excellent adhesion to substrates. Chemical stability and photochemical properties, which originate from its n-type highly degenerate semiconductor behavior along with a wide band gap are other advantages of ITO films [1][2][3][4][5][6]. It is also well known that the electrical and optical properties of semiconducting oxides like In 2 O 3 depend strongly on defect density created by external doping or disturbed stoichiometry as well as their preparation and growth conditions.…”

The effect of annealing treatment on microstructure and properties of indium tin oxides films

“…Transparent conducting oxide (TCO) thin films are widely used as electrodes owing to their excellent transmittance (∼90%) in the visible light wavelength region and electrical conductivity (∼10 −4 cm) [1]. TCO thin films have been applied as anti-static electricity shielding coatings, heat reflecting mirrors, solar cells, liquid crystal displays (LCDs), sensors, and organic light emitting devices (OLED).…”

The electrical and optical properties of molybdenum-doped indium oxide films grown at room temperature from metallic target

“…In the case of temperature sensitive substrates such as organics, it is critical to develop room temperature deposition techniques for the OLED electrodes [15][16][17][18]. To date, several deposition techniques have been used to develop TCO films, including RF [19][20][21] and dc [17,18,22,23] sputtering, plus laser deposition (PLD) [24][25][26], ion beam-assisted deposition (IBAD) [27] and high-density plasma evaporation (HDPE) [7] at room temperature. The lowest resistivity of the films deposited by these techniques is 2.6 × 10 −4 cm from a ceramic target.…”