Properties of an n+ i p+ Semiconductor Detector

Ziemba, F. P.; Pelt, G.; Ryan, Grace; Wang, L.

doi:10.1109/tns2.1962.4315987

Cited by 7 publications

(1 citation statement)

References 3 publications

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“…S OLID-STATE semiconductor diode detectors were developed in 1949 [1] but did not become important for highenergy physics until the development of the microelectronics industry provided rapid advances in their technology. The first wave of improvements was to the detectors themselves, with the use of diffused junctions and oxide passivation [2]- [4], photolithography [5], [7], high-resistivity silicon [6], and getters [7]. The first devices which provided micron-level position information became possible as a consequence of the industry drive to fit ever-larger numbers of ever-smaller transistors on a single chip and of charge transfer devices primarily developed for optical applications [8]- [11].…”

Section: Introductionmentioning

confidence: 99%

Silicon detectors with 3-D electrode arrays: fabrication and initial test results

Kenney

Parker

Segal

et al. 1999

IEEE Trans. Nucl. Sci.

171

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The first three-dimensional detectors with n and p electrodes that penetrate through the silicon substrate have been fabricated. Some expected properties, including low depletion voltages, wide voltage plateaus before leakage current limits are reached, and rapid charge collection are reviewed. Fabrication steps and initial test results for leakage currents and infrared signal detection are covered. The authors conclude with a description of current work, including fabrication of active-edge detectors, ones with sensitive areas that should extend to their physical edge.

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