Properties of barrier contacts with nanosize TiB x layers to InP

Arsentyev, I. N.; Bobyl, A. V.; Tarasov, I. S.; Болтовец, Н. С.; Иванов, В. Н.; Belyaev, A. E.; Kamalov, Andrei; Конакова, Р. В.; Kudryk, Ya. Ya.; Lytvyn, P. M.; Миленин, В. В.; Russu, E. V.

doi:10.1134/s1063782608070051

Cited by 2 publications

(3 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The results of layer-by-layer Auger analysis of the Au-TiB x -n-n + -InP contacts before and after RTA at Т = 400 and 600 °С also indicate absence of considerable intermixing at the interfaces between phases, both in the initial sample and those after RTA at temperatures up to 600 °С. They are also confirmed by the XRD patterns for the same samples [24]. An analysis of those patterns taken before and after RTA up to 600 °С showed presence of a quasi-amorphous TiB x film.…”

Section: Structure and Physico-chemical Properties Of Tib X And Zrb Xsupporting

confidence: 65%

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures

Belyaev¹

2008

Semicond. phys. quantum electron. optoelectron.

Self Cite

View full text Add to dashboard Cite

We investigated thermal stability of Au-TiB x (ZrB x) barrier contacts, as well as ohmic contacts with a TiB x diffusion barrier to n-Si (GaAs, InP, GaP, GaN, SiC). The electrophysical measurements of Schottky barrier diodes and ohmic contacts were performed both before and after rapid thermal annealing (RTA) up to 600 °С for the structures on Si, GaAs, InP and GaP, as well as up to higher temperatures for GaN (~900 °C) and SiC (~1000 °C). The concentration depth profiles of contact components were taken using Auger electron spectrometry, while phase composition and surface morphology of the metallization layers on test structures were determined using x-ray diffraction and atomic force microscopy. It was shown that the silicon, indium phosphide, gallium phosphide and gallium arsenide contact structures retained their properties and layer structure after RTA up to 600 °С. Contact degradation occurred at a temperature of 800 °С. The structures based on SiC (GaN) remained stable at temperatures up to 1000 °С (900 °С).

show abstract

Section: Structure and Physico-chemical Properties Of Tib X And Zrb Xsupporting

confidence: 65%

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures

Belyaev¹

2008

Semicond. phys. quantum electron. optoelectron.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Moreover, the SB electrophysical parameters remain practically the same after RTA at 1000 °С (see Table 1). Silicon Carbide and Related Materials 2008 One can see from the above that the thermal degradation threshold for contact systems based on TiB x and ZrB x on SiC 6H may be related, just as for similar systems on Si and GaAs (InP, GaP), to the thermal stability of the TiB x and ZrB x films [5][6][7]. We studied the Au−TiB x (ZrB x )−n-GaN contact systems with the XRD technique both before and after RTA at Т = 800 (900) °С.…”

Section: Resultsmentioning

confidence: 99%

“…To develop heat-resistant contacts, one should use materials that do not interact with either semiconductors or other metallization layers [1][2][3]. Our experience demonstrated that titanium and zirconium borides (along with nitrides and carbides of refractory metals) could be applied for such a purpose [3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Heat-Resistant Barrier Contacts Made on the Basis of TiB<sub>x</sub> and ZrB<sub>x</sub> to SiC and GaN

Lebedev

Belyaev

Болтовец

et al. 2009

MSF

View full text Add to dashboard Cite

We studied the heat resistance of AuTiBx (ZrBx) barrier contacts to n-SiC 6H and n-GaN. The Schottky barrier diode (SBD) parameters, the concentration depth profiles for contact structure components and the phase composition of contact metallization were measured both before and after rapid thermal annealing (RTA) at temperatures up to 900 °С (1000 °С) for contacts to GaN (SiC 6H). It is shown that the layered structure of metallization and electrophysical properties of Schottky barriers (SBs) remain stable after RTA, thus indicating their heat resistance. The ideality factor n of the I-V characteristic of SBDs after RTA was 1.2, while the SB height φВ was ~0.9 eV (~0.8 eV) for the gallium nitride (silicon carbide) barrier structures.

show abstract

Properties of barrier contacts with nanosize TiB x layers to InP

Cited by 2 publications

References 4 publications

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures

Heat-Resistant Barrier Contacts Made on the Basis of TiB<sub>x</sub> and ZrB<sub>x</sub> to SiC and GaN

Contact Info

Product

Resources

About