Properties of boron-doped (113) oriented homoepitaxial diamond layers

Taylor, Andrew; Lambert, N.; Gedeonová, Zuzana; Fekete, Ladislav; Lörinčı́k, Jan; Klimša, Ladislav; Kopeček, Jaromı́r; Hubı́k, P.; Šobáň, Z.; Laposa, Alexandr; Davydova, Marina; Voves, J.; Pošta, A; Povolný, Vojtěch; Hazdra, P.

doi:10.1016/j.diamond.2020.108223

Cited by 14 publications

(9 citation statements)

References 28 publications

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“…An HPHT‐grown synthetic Ib diamond crystals (0.5 carats, Sumitomo ELECTRIC, Hartmetall GmbH) were polished along the (113) crystalline plane using traditional scaife polishing techniques described in detail in the study of Cheng et al [ 18 ] to produce plane parallel substrates with an off–angle below 2° and root mean square (RMS) roughness <1 nm. Heavily doped BDD layers were grown in mixtures of CH 4 diluted with H 2 , and trimethylboron (TMB) as a boron precursor using optimized deposition conditions for the growth of epitaxial (100) BDD layers reported in the study of Mortet et al [ 17 ] The microwave power was 700 W, pressure 100 mbar, methane concentration 1%, and different boron to carbon (B/C) ratios in the gas phase (up to 4000 ppm) provided boron concentrations in the BDD layers between 10 17 and 10 21 cm −3 . Nonintentionally boron‐doped layers (p − ) were grown at low methane concentration (0.1%) due to the lower boron incorporation efficiency [ 17 ] without the addition of TMB in the gas phase keeping all other growth parameters identical to the one of heavily boron‐doped epitaxial growth.…”

Section: Methodsmentioning

confidence: 99%

“…This orientation offers an excellent trade‐off between the surface morphology, epilayer roughness, and electrical properties compared to (100) and (111) oriented BDD layers. [ 16,17 ] The advantages of using epitaxial layers with (113) orientation are as follows: higher growth rate and boron incorporation efficiency than (100) epitaxial layers; no tendency to form pyramidal unwanted mounds and easy to obtain a very good (smooth) surface morphology; electrical properties comparable to (100) p‐type (boron doped) epitaxial layers and better than (111) epitaxial layers, high potential for formation of high‐quality n‐type (phosphorus doped) epitaxial layers compared to (100) orientation.…”

Section: Introductionmentioning

confidence: 99%

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Pseudo‐Vertical Schottky Diode with Ruthenium Contacts on (113) Boron‐Doped Homoepitaxial Diamond Layers

Hazdra,

Laposa,

Šobáň

et al. 2023

Physica Status Solidi (a)

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Electrical properties of pseudo‐vertical Schottky barrier diodes (pVSBDs) prepared on (113)–oriented boron doped diamond layers using ruthenium for both the ohmic and Schottky contacts were investigated. First, Ru/Au ohmic contacts were evaporated on homoepitaxial boron doped diamond layers with different resistivity and their specific contact resistance was measured using circular transfer length method structures after annealing at various temperatures up to 750 ˚C. Then, pseudo‐vertical Schottky barrier diode structures were fabricated on the boron doped bi‐layer consisting of a lower, heavily boron‐doped layer ensuring an ohmic contact and an upper, lightly doped layer providing a rectifying Schottky contact. After necessary mesa etching, both contacts were formed by the evaporation Ru/Au bi‐layer. Results show that Ru forms a stable ohmic contact with very low contact resistance (10‐5‐10‐6 Ω.cm2) when deposited on boron doped diamond layers with metallic conductivity. It also provides an acceptable Schottky contact on low‐doped (113) homoepitaxial BDD. Both contacts, which are made simultaneously, realize pVSBDs with low on‐state resistance and low forward voltage drop. However, the lower barrier of the ruthenium contacts results in higher leakage. Ru pVSBDs thus show lower rectification ratio, higher leakage and a worse ideality factor compared to analogical pVSBDs using molybdenum contacts.This article is protected by copyright. All rights reserved.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Pseudo‐Vertical Schottky Diode with Ruthenium Contacts on (113) Boron‐Doped Homoepitaxial Diamond Layers

Hazdra,

Laposa,

Šobáň

et al. 2023

Physica Status Solidi (a)

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“…10 21 cm -3 from the width (12.32 cm -1 ) of the undisturbed zone center phonon line of diamond [4]. This highly boron-doped diamond layer has a low resistivity of 2 mΩ.cm, allowing the formation of ohmic contact with a specific contact resistance below 10 -6 Ω.cm -2 suitable for the fabrication of low ON resistance Schottky diodes [1]. or a high density of surface defects (sample 3-063).…”

Section: Methodsmentioning

confidence: 99%

“…Yet many scientific and technical issues must be resolved before the realization of reliable diamond electronic devices. Recent studies have demonstrated the interest in (113) epitaxial diamond layers in the fabrication of diamond electronic devices as this crystalline orientation offers better surface morphology, higher growth rate, high boron incorporation efficiency, lower surface roughness and defect-free surface in comparison with (100) and ( 111) orientations [1][2][3]. The fabrication process of semi-vertical diamond Schottky diodes requires the growth of epitaxial doped diamond bilayer with low and high dopant concentrations, which is the second necessary step in fabricating diamond electronic devices like Schottky diodes.…”

Section: Introductionmentioning

confidence: 99%

Study of cracks formation in HIGHLY – low boron-doped epitaxial (113) diamond bilayers

Klimša

Lambert

Davydova

et al. 2021

NANOCON 2021 Conference Proeedings

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In this work, we present the study of the formation of cracks in high and low boron-doped diamond epitaxial bilayers necessary in the fabrication process of Schottky diodes. Epitaxial diamond layers were grown on (113) oriented diamond substrates by Microwave Plasma Enhanced Chemical Vapor Deposition. The effect of the thickness and the methane concentration during the growth of the undoped diamond layer on the crack formation have been studied using optical and scanning electron microscopy (SEM). We experimentally observed a critical thickness of ca. 3.5 µm above which all undoped layers are cracked. The formation of these cracks is attributed to the relaxation of the elastic energy stored in the epitaxial undoped layer due to the significant lattice mismatch (ca. 0.8 %) between the undoped and highly boron-doped diamond layers with a boron concentration of 10 21 cm -3 as determined by Raman spectroscopy analysis.

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“…CVD diamond layers with (113) surface orientation are studied as a new platform for preparation of high-performance diamond power devices [1,2]. They offer better surface morphology and lower surface roughness in comparison with (100) and (111) oriented substrates.…”

Section: Introductionmentioning

confidence: 99%

Characterization of the Very Low Contact Resistance on Heavily Boron Doped (113) CVD Diamond

Voves

Laposa

Šobáň

et al. 2021

NANOCON 2021 Conference Proeedings

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The low resistance of ohmic contacts on diamond layers is important for the fabrication of diamond power electronic devices with fast switching capabilities for future high voltage applications. The low barrier height between the metal and diamond, high level of boron doping and annealing at elevated temperatures are the most critical parameters to reach the lowest contact resistivity. In this work, we report on titanium/gold ohmic contacts prepared on the heavily boron-doped (113) epitaxial diamond layers. The contact resistance has been characterized by the Circular Transmission Line Model (cTLM) structures. We used the analytical model of field enhanced emission, tunneling and the image force influence including Fermi level position dependence on the boron concentration for theoretical Ti/Au contact analysis and the Silvaco TCAD 2D simulation to estimate the measurement error associated with the nonzero metal resistance. We show that the resulting simulation values are consistent with the experimental results.

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Properties of boron-doped (113) oriented homoepitaxial diamond layers

Cited by 14 publications

References 28 publications

Pseudo‐Vertical Schottky Diode with Ruthenium Contacts on (113) Boron‐Doped Homoepitaxial Diamond Layers

Pseudo‐Vertical Schottky Diode with Ruthenium Contacts on (113) Boron‐Doped Homoepitaxial Diamond Layers

Study of cracks formation in HIGHLY – low boron-doped epitaxial (113) diamond bilayers

Characterization of the Very Low Contact Resistance on Heavily Boron Doped (113) CVD Diamond

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