Properties of Boron-Doped Epitaxial Diamond Films

Abstract

Boron-doped homo-epitaxial films were deposited by microwave plasma CVD on synthesized single-crystal diamonds. Boron concentration in the films was determined by the boron concentration in the reactant gases. The crystallinity of boron- doped films was found to be affected by the boron concentration in the reactant gases. The conductivity of boron doped films was determined by the concentration of boron, and the activation energy was nearly the same as for natural IIb diamonds. The effect of the surface orientation of substrates was found in the conductivity of highly doped films. The result of the Hall effect measurement indicated that the mobility of boron-doped diamond epitaxial films was 70 cm2/V·s even at 500°C.

Anodic Materials with High Energy Efficiency for Electrochemical Oxidation of Toxic Organics in Waste Water

“…It was observed better results evidenced by more homogeneity in films bulk, also showing a linear relation between the doping levels and boron concentration in the precursor source. Boron doping using other boron sources was also reported such as B 2 H 6 by Mort et al (1989) and Fujimori et al (1990), while B(OCH 3 ) 3 was used as boron source by Ran et al (1993).…”

Conductive diamond electrodes for water purification

“…The conductivity of diamond can be improved significantly by doping with boron. Boron doping is usually achieved by adding B 2 H 6 , 5,6 or B(OCH 3 ) 3 7,8 to the gas stream, or placing boron powder near the edges of the substrate prior to insertion into the CVD chamber 9 . Since the late 70's and early 80's, CVD technique was established as an economical, relatively fast and easy process for producing diamond.…”

Chemical Analysis of Impurity Boron Atoms in Diamond Using Soft X-Ray Emission Spectroscopy

“…High-quality B-diamond has been synthesized by a microwave plasma-assisted chemical vapor deposition (CVD) method where the boron concentration controls its electrical properties. 2,3 To clarify the relationship between the electronic structure and local structure of the boron atoms in B-diamond, researchers have analyzed the valence band and conduction band by soft X-ray emission spectroscopy (XES) and absorption spectroscopy (XAS) using synchrotron radiation (SR). [4][5][6] These spectroscopic studies have elucidated that covalent B-C bond formation in a diamond matrix is important for acceptor formation in p-type B-diamond semiconductors.…”