Abstract-This paper presents for the first time the design, fabrication, and demonstration of micromachined silicon dielectric waveguide based sub-THz interconnect channel for high efficiency, low cost sub-THz interconnect, aiming to solve the longstanding intra-/inter-chip interconnect problem. Careful studies of the loss mechanisms in the proposed sub-THz interconnect channel are carried out to optimize the design. Both theoretical and experimental results are provided with good agreement. To guide the channel design, a new Figure-of-Merit is also defined. The insertion loss of this first prototype with a 6-mm long interconnect channel is about 8.4 dB at 209.7 GHz, with a 3-dB bandwidth of 12.6 GHz.