Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4

Abstract

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Low-temperature-grown GaAs: Modeling of transient reflectivity experiments

“…Another interesting point is that our analysis implies that p-doped LT-GaAs should have a strong tendency to exhibit NTs ͑because N A will be fixed at a very large value͒: in fact, photoreflectance studies at 800 nm on such layers 27 show the same NTs as ours. Another source of NTs could also be an important residual doping in the MBE reactor.…”

Influence of the hole population on the transient reflectivity signal of annealed low-temperature-grown GaAs

“…14 Besides, we should note that an alternative way to have an important N A is to grow p-doped LT-GaAs: in fact, the photoreflectance studies performed at 800 nm in such types of layers 15 show the same negative transients as ours. 14 Besides, we should note that an alternative way to have an important N A is to grow p-doped LT-GaAs: in fact, the photoreflectance studies performed at 800 nm in such types of layers 15 show the same negative transients as ours.…”

Effects of carbon tetrabromide flux, substrate temperature and growth rate on carbon-doped GaAs grown by molecular beam epitaxy

“…Solid source molecular beam epitaxy (SSMBE) offers the advantage of a hydrogen-free environment for growth of C-doped compound semiconductors, by eliminating the passivation of carbon acceptors by hydrogen that is commonly observed in C-doped layers grown by MOCVD or GSMBE, which use hydrides as group V sources. Hence in recent years, the usage of CBr 4 in conjunction with SSMBE systems has been increasing [6][7][8][9].…”