A Monte Carlo simulation was performed to induce optimized parameters for CsI(Tl) crystals and large area PIN phohtodiode detectors for applications in high energy gamma ray spectroscopy. In order to derive the optimum parameters we used a Trade-Off procedure between the deposition energy and light transmission efficiency, while varying the detector thickness. Moreover, it was found that the surface treatment of the crystal in the photodiode is also an important factor for good light transmission. The tests were performed using a low noise charge-sensitive preamplifier and a pulse shape amplifier. Concerning the operating condition of the system, it is necessary to shape the time and reverse the bias voltage in order to provide another minimization of noise for the system. In order to maximize the light output from the crystal, the crystal geometry, crystal wrapping, optical bonding and matching to the PIN photodiode were all optimized. With a fixed crystal height of 5 cm, it was best to grind the sides and the top surface of the crystal on the front facing sides of the external reflectors, resulting in about a 14.5% enhancement compared with polishing all the sides and top.