Properties of Cu-doped ZnO films by RF sputtering method: Thickness dependence

Enhanced photoluminescence properties of Cu-doped ZnO thin films deposited by simultaneous RF and DC magnetron sputtering

“…Additionally, Cu in its Cu 2 þ ionic state (0.072 nm) has similar ionic radius compared to Zn 2 þ (0.074 nm) and the similarities in their electronic shell structure allows Cu 2 þ ions substitution easily into the ZnO host lattice. So far, numerous attempts have been performed to fabricate the Cu-doped ZnO films for specific applications in the field of optoelectronics through various deposition techniques, such as spray pyrolysis [9,12], RF sputtering [13][14][15][16], DC sputtering [17], simultaneous RF and DC magnetron sputtering [18], low-temperature aqueous solution route [19], pulsed laser deposition [20] and co-reactive magnetron sputtering [21]. However, among these, we focused on simultaneous RF and DC magnetron sputtering technique which enables here for better adhesion, tunable dopant concentration and controllability of structural and optical properties by independently doping of dopant element into host lattice.…”

Effects of Cu–Zn phases on electronic properties in ZnO:Cu films

“…The Cu 2 p XPS spectra are shown in Figure B. For samples 1100 and 1125, the Cu 2 p spectra were characterized by two peaks at 933.0 eV (Cu 2 p 3/2 ) and 952.7 eV (Cu 2 p 1/2 ), corresponding to the binding energy of Cu 2+ . The Cu 2 p spectrum had two peaks at 932.6 eV (Cu 2 p 3/2 ) and 952.54 eV (Cu 2 p 1/2 ) in samples 1150, 1175, and 1200, which moves to lower binding energy.…”

The effects of thickness on properties of B and Ga co-doped ZnO films grown by magnetron sputtering

“…The higher transmittance and lower absorptance in the visible region may be explained from the wide energy gap. When the energy band gap is higher than the energy in visible region, the films appear transparent [23]. Therefore the thickness does not affect the optical absorption in the visible region significantly.…”