Properties of cubic boron nitride films prepared by ion beam assisted deposition

Abstract

Absfmcf-Boron nitride films were prepared by ion beam assisted deposition (IBAD). The films were synthesized on Si(lO0) substrates by depositing boron vapor under simultaneous bombardment with nitrogen ions and nitrogen-argon mixture ions. Properties of cubic boron nitride (cBN) films are studied especially regarding the crystallization of the films and the valence band spectra obtained from x-ray photoelectron spectroscopy (XPS). Structural analysis by Fourier transform infrared spectroscopy (FTIR) and cross-sectional transmission electron microscopy (TEM) confirms that polycrystalline films with a high cBN fraction were synthesized. Valence-band spectra obtained from XPS were measured to provide a method for characterization of the BN phases on the basis of experimental observations for the bulk cBN and hBN samples and theoretical prediction of densities of states.

Estudo do mecanismo de deposição de filmes finos de nitreto de boro assistida por feixe de íons

“…A fase h-BN é mais fácil de ser formada pelo método IBAD do que a fase c-BN [25],.que exige, além de uma quantidade mínima de momentum transferido por átomo de boro evaporado [29,30], uma espessura mínima do filme responsável por aumento da tensão [31,32].…”