Properties of CuInS2 thin films grown by a two-step process without H2S

Klenk, R.; Blieske, U.; Dieterle, V.; Ellmer, K.; Fiechter, S.; Hengel, I.; Jäger-Waldau, Arnulf; Kampschulte, T.; Kaufmann, Christian A.; Klaer, J.; Lux‐Steiner, Martha Ch.; Braunger, D.; Hariskos, Dimitrios; Ruckh, M.; Schock, Hans‐Werner

doi:10.1016/s0927-0248(97)00083-4

Cited by 50 publications

(18 citation statements)

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“…It is noted that a commonly observed twin grain is seen in the CIS phase. Nanobeam diffraction performed on both sides of the dashed line shows that the surface layer, at the right of the dashed line, is the CIS phase with [1][2][3][4][5][6][7][8][9][10] zone axis, below which is the Cu 11 In 9 phase with [0-11] zone axis. This can be further seen by high-resolution TEM, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…CIS is used as an absorber layer in thin film solar cells because of its appropriate band gap ($1.5 eV) and absorption coefficient (>10 4 cm À1 ). Recent studies have shown that CIS solar cell efficiency ranges from 10.2% to 12.2% [1][2][3][4][5]. CIS thin films can be prepared by different methods and are normally produced by a two-step process.…”

Section: Introductionmentioning

confidence: 99%

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Ex situ structural characterization during the formation of CuInS2 thin films

2011

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ex situ structural characterization during the formation of CuInS2 thin films

2011

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“…Recently, 1D nanocrystalline materials such as semiconductor fi bers or nanorods have become the main focus and are of much considerable interest [35], and their morphology control has been demonstrated [36,37]. At present, thin-fi lm solar cells based on the absorber material CuInS 2 are prepared either by co-evaporation [38] or by a sequential process consisting of the deposition of metal precursors (copperrich) followed by annealing in a sulfur atmosphere [39,40]. For the future mass production of such cells, a direct deposition by magnetron sputtering would be advantageous since this technique can be easily scaled up to large areas.…”

Section: Iron Disulfi De Pyrite Cuins 2 and Cu 2 Znsnsmentioning

confidence: 99%

State‐of‐the‐Art of Nanostructures in Solar Energy Research

Sagadevan¹

2014

Advanced Energy Materials

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The world's major energy sources are non-renewable and are faced with an ever-increasing demand, and hence are not expected to last long. Besides being non-renewable, these sources include mainly fossil fuels, and contribute tremendously to the perennial problem of global warming. The serious depletion and pollution problems of the above energy sources have made the international community focus attention on alternative sources of energy, especially solar energy, which appears highly promising. Nanostructure-based solar energy is attracting signifi cant attention as a possible candidate for achieving drastic improvement in photovoltaic energy conversion effi ciency. Although such solar energy is expected to be more expensive, there is a growing need for effi cient and lightweight solar cells in aerospace and related industries. It is certain to rule the energy sector when break-even, of high performance is achieved and its cost becomes comparable with that of other energy sources. Various approaches have been proposed to enhance the effi ciency of solar cells. Applications of nanotechnology help us to design solar devices more economically. Nanophotovoltaic cells are used to create cost, effective, effi cient, solar energy storage systems or solar energy on a large scale. Nanostructured materials contain structures with dimensions in that scale; they include polycrystalline materials with nanometer-sized crystallites, materials with surface protrusions spatially separated by a few nanometers granular or porous materials with grain sizes in the nanometer range or nanometer-sized metallic clusters embedded in a dielectric matrix. The motivation for using nanostructured materials emerges from their specifi c physical and chemical properties. Enhancing the regular crystalline

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“…Sulfurization of metallic precursors is a well-developed process to produce a high bandgap (1.55eV) absorber. Hahn-Meitner-lnstitut of Germany has developed a similar process using elemental sulfur [9]. A new selenization set-up for DESe was build and moved near the furnace to reduce the distance between the furnace and selenium source.…”

Section: List Of Figuresmentioning

confidence: 99%

CIGSS Thin Film Solar Cells: Final Subcontract Report, 10 October 2001-30 June 2005

Dhere¹

2006

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Properties of CuInS2 thin films grown by a two-step process without H2S

Cited by 50 publications

References 8 publications

Ex situ structural characterization during the formation of CuInS2 thin films

Ex situ structural characterization during the formation of CuInS2 thin films

State‐of‐the‐Art of Nanostructures in Solar Energy Research

CIGSS Thin Film Solar Cells: Final Subcontract Report, 10 October 2001-30 June 2005

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