Properties of electron-beam-evaporated tin oxide films

Das, Debajyoti; Banerjee, Ratnabali

doi:10.1016/0040-6090(87)90028-9

Cited by 103 publications

(27 citation statements)

References 18 publications

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“…The activation energy of tin oxide films is due to the formation of donor levels below conduction band. Earlier researchers have obtained activation energy to be 0.26 eVand 0.2 eV [18]. Some other groups reported activation energy as 0.73 eV [19].…”

Section: Resistance Versus Temperature Characteristicsmentioning

confidence: 99%

Preparation, Characterization and Gas Sensing Performance of Pure SnO2 Thin Films Deposited using Physical Vapour Deposition Technique

Thakare

Patil²,

Deshmukh³

et al. 2016

IRA-JTE

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Nanocrystalline SnO 2 thin films were successfully prepared using Physical Vapour Deposition technique and were annealed at 400 o C. Structural, morphological, elemental, compositional, optical, and IntroductionSince last few decades there has been an increasing interest to prepare inexpensive SnO 2 thin films. Tin oxide is the most widely used metal oxide semiconductor in gas sensing because of its capability to detect combustible and hazardous gases such as methane, LPG, CNG, CO, CO 2 , Cl 2 , H 2 S etc [1][2][3][4]. It is an n-type semiconductor of tetragonal structure with band gap energy about 3.6 eV at room temperature. It is cheap, nontoxic and has strong oxidizing power, high photochemical corrosive resistance, good electrical, optical and piezoelectric behavior. In recent years, semiconductor metal oxide films have received considerable attention because of their potential applications [5] such as photochemical and photoconductive devices in LCD, lithium-ion batteries,[6-8] a transport conductive electrode for solar cells [9,10] a gas sensing material for gas sensor devices [11], transport conducting electrodes [12] etc. The majority of the applications adopted SnO 2 as the sensing material due to its high sensitivity and stability at lower operational temperatures, in spite of its poor selectivity [13].Out of many thin film preparation techniques such as chemical vapour deposition [14], spray pyrolysis [15], sputtering [16], activated reactive evaporation [17], etc. Physical Vapour Deposition method is straight forward and simple one. Because of deposition in high vacuum and at room temperature, this technique produces contamination free uniform thin films. In the present study, we used Hind Hivac vacuum depositing unit for depositing pure tin onto the cleaned glass substrates at room temperature. The films were then heated in muffle furnace at 200 o C for 24 hrs to allow oxidation. The so formed pure SnO 2 thin films were then annealed at 300, 400 and 500 o C each for 2 hrs. Structural, morphological, electrical, optical and gas sensing characterizations of the samples were studied.

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Section: Resistance Versus Temperature Characteristicsmentioning

confidence: 99%

Preparation, Characterization and Gas Sensing Performance of Pure SnO2 Thin Films Deposited using Physical Vapour Deposition Technique

Thakare

Patil²,

Deshmukh³

et al. 2016

IRA-JTE

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show abstract

“…Such advantages as high transparency in a visible range of wavelengths and high conductivity make SnO 2 very suitable as transparent conductive electrodes in such devices as solar sells, flat panel displays, etc (Rembeza et al, 2001;Jarzebski et al, 1976;Das and Banerjee, 1987;Song, 1999). Wide-gap semiconductor SnO x films exhibit quantum confinement effect with decreasing of crystallite sizes, i.e.…”

Section: Introductionmentioning

confidence: 99%

“…The spraying process is carried out in an plasma of argon of high purity with the addition of oxygen. Das and Banerjee (1987) show the relation between a structure and other physical properties of the films. For the deposited by electronbeam evaporation SnO x films a change of x value by varying the substrate temperature T S was revealed.…”

mentioning

confidence: 99%

“…The resulting film has an extremely developed surface and requires no further heat treatment (Buturlin et al, 1983a). During thermal sputtering of an oxide target (Das and Banerjee, 1987;Feng et al, 1979) an annealing is not required, too. The method is based on the sputtering of target made of pressed powder of desired oxide (Jarzebski, 1982) or in plasma at high frequency in a threeelectrode circuit, or by an ion beam.…”

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confidence: 99%

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Influence of Crystallization on the Properties of SnO2 Thin Films

Мухамедшина¹,

Бейсенханов²

2012

Advances in Crystallization Processes

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“…Doped tin oxide (SnO 2 ) films have been widely used as transparent conducting electrodes in many optoelectronic and electro-optic devices such as solar cells [2,3] and flat panel displays [4,5] due to their high electrical conductivity and high optical transmittance in the visible, and high infrared reflectance. There are numerous deposition techniques used to grow SnO 2 films (either doped or undoped) including chemical vapor deposition (CVD) [6,7], spray pyrolysis [8,9], thermal evaporation [10], sol-gel [11] and sputtering [12,13,14]. Other techniques, such as pulsed laser deposition (PLD) might be used to achieve high-quality SnO 2 films; however, the growth of Mn-doped SnO 2 films by PLD has not yet been reported.…”

Section: Introductionmentioning

confidence: 99%