Properties of emission centers in manganese doped zinc sulfide

Borisenko, N. D.; Bulanyǐ, M. F.; Kodzhespirov, F. F.; Polezhaev, B. A.

doi:10.1007/bf00662420

Cited by 16 publications

(23 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The wide one dominating in the spectrum and possessing  max  587 nm is typical for ZnS doped by Mn. According to [10][11][12], it consists of several individual bands caused by various localizations of impurity Mn atoms in the crystal lattice of ZnS. The band with  max = 600 nm is associated with Mn 2+ ions in octahedral interstices, while the band with  max = 578 nm -with Mn 2+ ions near dislocations or point defects [10,11] (Fig.…”

Section: Experimental Procedures and Resultsmentioning

confidence: 99%

Effect of heating rate on oxidation process of fine-dispersed ZnS:Mn obtained by SHS

Bacherikov¹

2015

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

Abstract. The influence of annealing at 350 °C in air atmosphere on the luminescent characteristics of powdered ZnS: Mn obtained by self-propagating high-temperature synthesis has been studied. It was shown that variation in material heating rate due to changes in the annealing temperature results in different behavior of oxidative processes. It has been ascertained that the slow heating of powdered ZnS:Mn, compared with the rapid one in the presence of oxygen, promotes active oxidation of ZnS and formation of Frenkel pairs, increases mileage of defects acting as sensitizers, and their localization near Mn 2+. The model which explains the observed changes in the luminescence and PLE spectra has been presented.

show abstract

Section: Experimental Procedures and Resultsmentioning

confidence: 99%

Effect of heating rate on oxidation process of fine-dispersed ZnS:Mn obtained by SHS

Bacherikov¹

2015

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

show abstract

“…1b). The band with  max = 600 nm is related to Mn 2+ ions in octahedral interstitial sites, while the band with  max = 578 nm is related to Mn 2+ ions close to dislocations or point defects [27]. The majority of authors [27][28][29] relate the band with  max 557 nm to the centres formed by the ions of manganese located in the sublattice of zinc in the sites of severe lattice distortion.…”

Section: Resultsmentioning

confidence: 99%

“…The band with  max = 600 nm is related to Mn 2+ ions in octahedral interstitial sites, while the band with  max = 578 nm is related to Mn 2+ ions close to dislocations or point defects [27]. The majority of authors [27][28][29] relate the band with  max 557 nm to the centres formed by the ions of manganese located in the sublattice of zinc in the sites of severe lattice distortion. A number of authors [30] consider the emission band with  max = 557 nm to be complex and conditioned by radiation from several centres located in tetrahedral sites of ZnS crystalline lattice and surrounded by defects.…”

Section: Resultsmentioning

confidence: 99%

The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis

Bacherikov¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

View full text Add to dashboard Cite

Abstract. Considered in this paper is the model that combines appearance of defects responsible for self-activated (SA) emission in ZnS with its piezoelectric properties. Being based on analysis of the luminescence spectrum, the authors demonstrate the influence of mechanical destruction, impact of ultrasound, microwave radiation and pulsed magnetic field on the emission efficiency for centers of luminescence connected with intrinsic defects in ZnS:Mn prepared using the method of self-propagating hightemperature synthesis (SHS). It has been shown that downsizing the ZnS:Mn crystals prepared according to the above method as well as more discrete differentiation of phases present in this material due to development and growth of inner boundaries and surface under external actions leads to quenched SA-photoluminescence with λ  400-525 nm.

show abstract

“…The Mn 2+ ions, which isovalently substitute the Zn 2+ ions at the sites of the ZnS crystal lattice, do not form luminescence centers because of the high symmetry of the intracrystal field and the small probability of intracenter radiative transitions. This is evidenced by the value of the energy of the radiative transition 4 T 1 ( 4 G) → 6 A 1 ( 6 S), which, for such centers, should correspond to the green region of the spectrum, in which luminescence of Mn 2+ ions is absent [4]. However, these ions can absorb exciting radiation in the range of λ = 530-535 nm.…”

mentioning

confidence: 97%

Mechanism of photoluminescence excitation of Mn2+ ions in ZnS crystals

2005

Self Cite

View full text Add to dashboard Cite

535.37The mechanisms of photoluminescence excitation of Mn 2+ ions in ZnS crystals have been investigated on the basis of complex analysis of the temperature dependences of the photoluminescence and photoluminescence-excitation spectra of ZnS:Mn crystals. The activation energy of a manganese luminescence center was estimated at E a = 0.17 0.05 eV. It is shown that E a represents an energy band with a width ∆E a = 0.1 eV, within which a manganese luminescence center can experience radiationless recombination.Keywords: temperature dependence of photoluminescence spectra, luminescence center of manganese, excitation spectrum, activation energy of manganese center, ZnS crystals.Introduction. Zinc sulfide crystals doped with Mn 2+ ions have long been studied. However, up to now, there has been no clear idea on the mechanisms of transfer of the excitation energy to different manganese centers (MC) of luminescence in zinc sulfide crystals exposed to temperature action or exciting radiation. At the same time, such information would allow one not only to predict the operation of various luminescent devices based on ZnS:Mn cryctals, but also to widen fundamental notions of the monomolecular-luminescence process as a whole.An our opinion, the indicated problems can be solved by investigating, in complex, the photoluminescence and photoluminescence-excitation spectra of ZuS:Mn crystals with different concentrations of an activator at different exciting-radiation energies and temperatures.Samples and Experimental Procedure. ZnS:Mn crystals grown from a melt under an argon pressure by the Bridgman-Stockbarger method [1] were investigated. The concentration of Mn 2+ ions in a mixture was equal to C Mn = 1⋅10 −4 -5⋅10 −2 g of MnS/g of Zn (hereinafter g/g). As the exciting radiation sources, we used LGN-517 lasers with a radiation wavelength λ exc = 441 nm corresponding to the absorption band of Mn 2+ ions in ZnS crystals and

show abstract

Properties of emission centers in manganese doped zinc sulfide

Cited by 16 publications

References 7 publications

Effect of heating rate on oxidation process of fine-dispersed ZnS:Mn obtained by SHS

Effect of heating rate on oxidation process of fine-dispersed ZnS:Mn obtained by SHS

The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis

Mechanism of photoluminescence excitation of Mn2+ ions in ZnS crystals

Contact Info

Product

Resources

About