Properties of epitaxial SrRuO3 thin films

Wu, X. D.; Foltyn, S. R.; Dye, R. C.; Coulter, Y.; Muenchausen, R. E.

doi:10.1063/1.109388

Cited by 152 publications

(73 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The Curie temperature T c = 144.9 K was evaluated from the intersection point of two fitted lines. The residual resistivity ratio RRR = 4.8, defined as the ratio between the resistivity measured at 300 K and at 0 K ( 0 is estimated from the extrapolation of the fitting for T < T c to 0 K), matches the typical values of about 5 or less reported in the literature for PLD 26,35 and MOCVD 36,37 thin films. Interestingly, the best stoichiometric films prepared by molecular beam epitaxy may exhibit RRR as high as 26 (Ref.…”

Section: Methodssupporting

confidence: 55%

Ab initioand photoemission study of correlation effects in SrRuO3thin films

et al. 2013

View full text Add to dashboard Cite

We present the experimental and theoretical study of correlation effects in epitaxial SrRuO 3 thin films. Experimentally, we have performed resonant ultraviolet photoemission spectroscopy (UPS) and angle-resolved hard x-ray photoemission spectroscopy (HAXPES) measurements. For resonant UPS, the two methods, Fanoprofile fitting of constant initial state spectra and the energy distribution curves equidistant difference spectra, were used to extract Ru 4d partial spectral weight (PSW) in the valence band. We find Ru 4d PSW possessing a clearly pronounced coherent peak at the Fermi level together with angle-resolved HAXPES spectra demonstrating no difference in surface and bulk electronic structure. From comparison of experimental data with theoretical calculations done at density functional theory level, we conclude that SrRuO 3 is a weakly correlated material and electronic structure of it can be consistently described employing first-principles approaches.

show abstract

Section: Methodssupporting

confidence: 55%

Ab initioand photoemission study of correlation effects in SrRuO3thin films

et al. 2013

View full text Add to dashboard Cite

show abstract

“…The combination of good chemical stability, good metallic conductivity [3], and easy epitaxial growth on various perovskite substrates [4][5][6] makes it attractive for possible multilayer device applications [7]. There is some evidence [8] that above ≈800K the structure reverts to cubic.…”

Section: Introductionmentioning

confidence: 99%

Transport properties, thermodynamic properties, and electronic structure ofSrRuO3

et al. 1996

View full text Add to dashboard Cite

(today) SrRuO3 is a metallic ferromagnet. Its electrical resistivity is reported for temperatures up to 1000K; its Hall coefficient for temperatures up to 300K; its specific heat for temperatures up to 230K. The energy bands have been calculated by self-consistent spin-density functional theory, which finds a ferromagnetic ordered moment of 1.45µB per Ru atom. The measured linear specific heat coefficient γ is 30mJ/mole, which exceeds the theoretical value by a factor of 3.7. A transport mean free path at room temperature of ≈ 10Å is found. The resistivity increases nearly linearly with temperature to 1000K in spite of such a short mean free path that resistivity saturation would be expected. The Hall coefficient is small and positive above the Curie temperature, and exhibits both a low-field and a high-field anomalous behavior below the Curie temperature.65.40. Em,75.40.Cx,71.25.Pi,72.15.Eb,72.15.Gd

show abstract

“…The LC-AFM scans were taken with a bias voltage varying from 0.1 to 0.95 V, with steps of 0.05 V, at the scanned area of 500ϫ 500 nm 2 . Regardless of applied bias voltage, the observed surface always consisted of areas of different conductivities.…”

Section: -2mentioning

confidence: 99%

Surface layer of SrRuO3 epitaxial thin films under oxidizing and reducing conditions

Młynarczyk

Szot

Petraru

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

Imperfect stoichiometry and heterogeneity of a surface layer of SrRuO3 epitaxial thin films, grown on SrTiO3 substrates, are presented with the help of various methods. Rutherford backscattering spectroscopy, x-ray photoemission spectroscopy (XPS), and time of flight secondary ion mass spectrometry are used to obtain information about the stoichiometry and uniformity of the SrRuO3 structure. The temperature of chemical decomposition is first determined for polycrystalline samples under different conditions using thermogravimetry analysis. Then the determined values are used for thin film annealings in high and low oxygen pressure ambients, namely, air, vacuum, and hydrogen. The surface deterioration of the thin film together with changes in its electronic structure is investigated. O1s and Sr3d core lines measured by XPS for as-made samples obviously consist of multiple components indicating different chemical surroundings of atoms. Thanks to different incident beam angle measurements it is possible to distinguish between interior and surface components. Valence band spectra of the interior of the film are consistent with theoretical calculations. After annealing, the ratio of the different components changes drastically. Stoichiometry near the surface changes, mostly due to ruthenium loss (RuOX) or a segregation process. The width and position of the Ru3p line for as-made samples suggest a mixed oxidation state from metallic to fully oxidized. Long annealing in hydrogen or vacuum ambient leads to a complete reduction of ruthenium to the metallic state. Local conductivity atomic force microscopy scans reveal the presence of nonconductive adsorbates incorporated in the surface region of the film. Charge transport in these measurements shows a tunneling character. Scanning tunneling microscopy scans show some loose and mobile adsorbates on the surface, likely containing hydroxyls. These results suggest that an adequate description of a SrRuO3 thin film should take into account imperfections and high reactivity of its surface region.

show abstract

Properties of epitaxial SrRuO3 thin films

Cited by 152 publications

References 6 publications

Ab initioand photoemission study of correlation effects in SrRuO3thin films

Ab initioand photoemission study of correlation effects in SrRuO3thin films

Transport properties, thermodynamic properties, and electronic structure ofSrRuO3

Surface layer of SrRuO3 epitaxial thin films under oxidizing and reducing conditions

Contact Info

Product

Resources

About