Properties of Er – doped layers grown from Er: YAG (YAP) crystalline targets by sub-picosecond laser deposition

Abstract

Thin YAG (Y 3 Al 5 O 12 ) and YAP (YAlO 3 ) films doped with Er content were grown by sub-picosecond (450 fs) KrF laser deposition from crystalline Er: YAG and Er: YAP laser rods. The influence of laser power density, substrate temperature, target-substrate distance and deposition ambient atmosphere (vacuum or oxygen) was studied. Results of morphological, compositional, structural and luminescence analysis are presented. Crystalline films have been obtained even for low substrate temperature. Luminescence corresponding to Er +3 ions was observed for all the samples.

Active glass waveguide amplifier on GaAs by UV-pulsed laser deposition and femtosecond laser inscription

“…Soft glasses, in particular tellurite based glasses are well known for their high optical nonlinearity, low phonon energy, high rare earth solubility hosts, excellent mid-IR transparency up to ∼ 5 µm and high Raman gain, which find applications in supercontinuum generation, upconversion based visible sources, mid-IR laser sources and Raman amplifiers [14][15][16][17][18][19][20]. PLD has been used to produce thin films of doped glasses and crystals on silica substrates [21][22][23][24][25]. The main focus of the work reported here is the use of GaAs substrates, together with a silica buffer layer, for the deposition of high concentration rare-earth ion doped glass, which is suitable for engineering a fully integrated pumped waveguide structure.…”

Nanocrystalline Er:YAG thin films prepared by pulsed laser deposition: An electron microscopy study

“…Also Lancok et al and Jelinek et al applied PLD to obtain YAG films doped with Nd or Er, respectively [8,9]. The obtained structures have been studied by either XRD (X ray diffraction), electron microprobe analysis, Raman spectroscopy and/or high resolution SEM (scanning electron microscopy).…”