Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering

Lygdenova, T. Z.; Kalygina, V. M.; Новиков, В. А.; Prudaev, I. А.; Толбанов, О. П.; Tyazhev, A.

doi:10.1007/s11182-018-1302-0

Cited by 4 publications

(1 citation statement)

References 3 publications

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“…The ratio of the surface areas of the Si pieces and the sputtered part of the target was 3 × 10 −3 . After deposition of Ga2O3 films, the obtained structures were annealed in an Ar atmosphere for 30 min at a temperature of 900 °C to form the β-phase of Ga2O3 [7]. The film thickness was 160-180 nm and was measured by means of a Solver HV atomic force microscope of NT-MDT.…”

Section: Methodsmentioning

confidence: 99%

Oxygen Sensors Based on Thin Films of Gallium Oxide Modified with Silicon

Аlmaev

Chernikov

Kushnarev

et al. 2019

The 6th International Electronic Conference on Sensors and Applications

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The results of an investigation of the electrical resistivity of Ga2O3 thin films modified with silicon under the influence of oxygen in the range of O2 from 9 to 100 vol. % and changes in the heating temperature of structures from 25 to 700 °C were presented. Thin films of Ga2O3 were obtained by RF magnetron sputtering of Ga2O3 targeted with pieces of Si on the target’s surface in oxygen–argon plasma. The possibility of developing selective oxygen sensors based on thin films Ga2O3 modified with silicon with a temperature of maximum response 400 °C was shown. Oxygen influence leads to a reversible increase in the samples’ resistance, due to the chemisorption of oxygen on the surface of thin Ga2O3 films. An increase in the response of sensors based on the thin polycrystalline films of gallium oxide modified with silicon is caused an increase in the adsorption centers for O−, due to an increase in the surface inhomogeneity and the appearance of additional adsorption centers Si4+.

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Section: Methodsmentioning

confidence: 99%

Oxygen Sensors Based on Thin Films of Gallium Oxide Modified with Silicon

Аlmaev

Chernikov

Kushnarev

et al. 2019

The 6th International Electronic Conference on Sensors and Applications

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Oxygen sensors based on gallium oxide thin films with addition of chromium

Аlmaev

Chernikov

Davletkildeev

et al. 2020

Superlattices and Microstructures

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Effect of oxygen on the properties of Ga₂O₃:Si thin films

Аlmaev

Chernikov²,

Kushnarev

et al. 2019

J. Phys.: Conf. Ser.

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The results of studies of electrical and gas-sensitive characteristics of thin films Ga2O3:Si on exposure to oxygen in the range from 0 to 100 vol. % and operating temperatures from 25 to 700 °C were presented. Samples were obtained by HF magnetron sputtering. The possibility of developing low-temperature oxygen sensors was shown. A model of oxygen interaction with Ga2O3:Si films was proposed. The mechanism of Si influence on gas-sensitive properties of thin films of gallium oxide was proposed.

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Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering

Cited by 4 publications

References 3 publications

Oxygen Sensors Based on Thin Films of Gallium Oxide Modified with Silicon

Oxygen Sensors Based on Thin Films of Gallium Oxide Modified with Silicon

Oxygen sensors based on gallium oxide thin films with addition of chromium

Effect of oxygen on the properties of Ga₂O₃:Si thin films

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Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering

Cited by 4 publications

References 3 publications

Oxygen Sensors Based on Thin Films of Gallium Oxide Modified with Silicon

Oxygen Sensors Based on Thin Films of Gallium Oxide Modified with Silicon

Oxygen sensors based on gallium oxide thin films with addition of chromium

Effect of oxygen on the properties of Ga2O3:Si thin films

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Product

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Effect of oxygen on the properties of Ga₂O₃:Si thin films