Properties of In2O3 Films, Deposited by dc-Magnetron Sputtering on Al2O3 Substrates with Different Temperatures

Gritskikh, V. A.; Zhikharev, I. V.; Kara-Murza, S. V.; Korchikova, N. V.; Krasnyakova, T. V.; Nikolaenko, Yuri M.; Tikhii, A. A.; Pavlenko, A. V.; Yurasov, Yu. I.

doi:10.1007/978-3-319-56062-5_5

Cited by 2 publications

(4 citation statements)

References 10 publications

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“…Annealing leads to the unification of the properties of the studied films and eliminates the inhomogeneity of the refractive index in the thickness direction (Table II) [18][19][20]. Now, we have confirmed these results based on the interference pattern observed in the spectrophotometric data (Fig.…”

Section: Resultssupporting

confidence: 78%

“…The substrate temperature also affects the fundamental absorption edge of the films studied in [18][19][20]. The observed direct band gap E Γ g decreases with increasing temperature.…”

Section: Resultsmentioning

confidence: 99%

“…Ellipsometric measurements [18][19][20] show an increase in the thickness d of the films with a decrease in the substrate temperature. The inhomogeneity of the films also increases with a decrease in the substrate temperature T .…”

Section: Resultsmentioning

confidence: 99%

“…In this paper, we summarize the results of our previous studies on the structure and optical properties of In 2 O 3 films deposited onto Al 2 O 3 (012) substrates in various modes of direct current (DC) magnetron sputtering [15][16][17][18][19][20][21].…”

Section: Introductionmentioning

confidence: 99%

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Optical and X-Ray Studies of Indium Oxide Films Deposited by DC Magnetron Sputtering

Tikhii,

Sviridova,

Zhikhareva

et al. 2024

Acta Phys. Pol. A

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The results of our studies on the structure and optical properties of In2O3 films deposited by DC magnetron sputtering onto Al2O3 (012) substrates are summarized. The films differ in terms of deposition time and substrate temperature. X-ray diffraction shows that the position and half-width of the peak related to the (222) plane of the cubic modification of In2O3 depends on the deposition time. Ellipsometric and optical transmission measurements show that the refractive index of films deposited on substrates at room temperature increases in the direction from the substrate to the external interface. The refractive index of the films deposited at a substrate temperature of more than 300 • C is uniform, except for a rough layer on the surface. Annealing eliminates inhomogeneity of the refractive index and decreases the observed band gap for direct transitions. The latter results from a decrease in lattice defects concentration that causes a change in the Burstein-Moss shift. The true value of the band gap is insensitive to annealing. topics: indium oxide films, band gap, optical properties, X-ray diffraction analysis

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Section: Resultssupporting

confidence: 78%

“…The substrate temperature also affects the fundamental absorption edge of the films studied in [18][19][20]. The observed direct band gap E Γ g decreases with increasing temperature.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Optical and X-Ray Studies of Indium Oxide Films Deposited by DC Magnetron Sputtering

Tikhii,

Sviridova,

Zhikhareva

et al. 2024

Acta Phys. Pol. A

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Optical Properties and Structure of In2O3 Films Deposited on Al2O3 (012) Substrates by dc-Magnetron Sputtering

Tikhii,

Nikolaenko,

Svyrydova

et al. 2023

Poverhnostʹ. Rentgenovskie, sinhrotronnye i nejtronnye issledov

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The results of studies of the optical properties and structure of In2O3 films on Al2O3 (012) substrates deposited by dc-magnetron sputtering are summarized. The investigated films differ in the deposition time, substrate temperature, and the presence of additional heat treatment in air. According to X-ray diffraction measurements, these films show a reflex, which correspond to the (222) plane of the cubic modification of In2O3. Its exact position and half-width depend on the deposition time. The optical properties of the obtained films are explained by the microstructure, which is inhomogeneous in thickness and formed during the sputtering of a target with a relatively low mechanical strength. Thus, the refractive index of films deposited on substrates at room temperature increases in the direction from the substrate to the external interface. At a substrate temperature of more than 300°C, the refractive index of the films is uniform, except for a rough layer on the surface. Heat treatment reduces the number of defects in the crystal structure of the films, and leads to densification of the film material. As a result, the inhomogeneity of the refractive index disappears and the observed band gap for direct transitions decreases. The latter result from a change in the Burstein–Moss shift in consequence of the decrease of lattice defects concentration. The band gap for “indirect” transitions (that corresponds to the true value of the band gap) is insensitive to annealing.

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Properties of In2O3 Films, Deposited by dc-Magnetron Sputtering on Al2O3 Substrates with Different Temperatures

Cited by 2 publications

References 10 publications

Optical and X-Ray Studies of Indium Oxide Films Deposited by DC Magnetron Sputtering

Optical and X-Ray Studies of Indium Oxide Films Deposited by DC Magnetron Sputtering

Optical Properties and Structure of In<sub>2</sub>O<sub>3</sub> Films Deposited on Al<sub>2</sub>O<sub>3</sub> (012) Substrates by dc-Magnetron Sputtering

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