Properties of InGaN Films Grown by Reactive Sputtering

Abstract

InGaN films were grown on (0001) sapphire substrates by reactive sputtering in nitrogen plasma, using a GaAs wafer and a pure indium target. It was found that In, Ga, As, and N atoms adsorb on the substrate and react with each other to form an InGaNAs film at a low substrate temperature. With increasing the substrate temperature to 550 °C, the arsenic atoms in the grown layer are completely desorbed, forming the InGaN film. X-ray diffraction analysis showed that the lattice constant for the c-axis obtained from the (0002) diffraction peak of the InGaN films decreases linearly with an increase in Ga composition, obeying Vegard's law. Optical analysis revealed that the InGaN films have a direct band gap structure as InN and GaN and the band gap energy of the InGaN films can be tailored by varying the area ratio of the GaAs wafer to the indium target.

Investigation of GaN/InGaN thin film growth on ITO substrate by thermionic vacuum arc (TVA)

“…The XRD patterns of the InGaN thin films deposited on the ITO substrate exhibited polycrystal structure with three diffraction peaks at 30.30° corresponding to the (100) plane of the InGaN, 33.00° and 36.30° corresponding to the (0002) and (10)(11) planes of the GaN, respectively. Wang et al [39] Some specific properties of the grown films are determined by utilizing the XRD pattern.…”

“…We successfully achieved hexagonal GaN/InGaN thin film on ITO substrate using TVA method. The XRD patterns of the InGaN thin films deposited on the ITO substrate exhibited polycrystal structure with three diffraction peaks at 30.30°, 33.00° and 36.30° corresponding to the (100), (0002) and (10)(11) planes of the InGaN, respectively. Below 450 nm there is a strong absorbance in the film.…”

“…With all these advantages, III-Nitride structures are the most suitable materials for fabrication of optoelectronic devices in blue and ultraviolet (UV) spectral regions. It is possible to grow high-quality InGaN epitaxial layers by modern crystal growth techniques such as molecular beam epitaxy (MBE) [7,9,10,13,19,20,23,30], radio frequency sputtering technique (RFSM) [11,14,16,[37][38][39] and metal organic chemical vapor deposition (MOCVD) [3-5, 17, 26, 36, 40]. The method of epitaxial crystal growth with a molecular beam involves the reaction of a thermal beam of atoms or molecules with a crystal surface in a very high vacuum environment.…”

N2 Gaz Akiş Hizinin, Sputter Tekni̇ği̇nden Elde Edi̇len İndi̇yum-Galyum-Ni̇trür Üçlü İnce Fi̇lmi̇ni̇n Opti̇k, Yapisal Ve Morfoloji̇k Özelli̇kleri̇ne Etki̇si̇ni̇n İncelenmesi̇

“…Growth of InGaN thin films can be obtained by using several methods such as; molecular beam epitaxy (MBE) [6][7], metal organic chemical vapor deposition (MOCVD) [8][9] and sputtering technique [10][11][12][13][14][15][16]. Sputtering thin film growth technique is basically a process in which after an inert gas (noble gas, usually argon), which is sent between two differently polarized electrodes, is converted into a positive ion, the material is accelerated towards the target material in the cathode (negative electrode) these scraped particles will grow one by one on the base placed exactly opposite the target [17][18].…”

The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc

“…Challenges exist in production of nitride compounds due to the noble nature of nitrogen. InGaN thin film growth methods can be given as metal organic chemical vapor deposition (MOCVD) (Nakamura et al, '93;Ji et al, 2003;Jampana et al, 2010;Bae et al, 2014), molecular beam epitaxy (MBE) (Browne et al, 2012;Jiao et al, 2013;Muziol et al, 2015), rf magnetron sputtering (Andreev, 2003;Guo et al, 2010;Wang et al, 2013), metal-organic vapor phase epitaxy (MOVPE) (Oliver et al, 2003;Ahl et al, 2014). In this research, InGaN thin films were prepared on amorphous glass substrates by the non-reactive thermionic vacuum arc technique.…”