Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions

Bracht, H.; Stolwijk, N. A.; Mehrer, H.

doi:10.1103/physrevb.52.16542

Cited by 313 publications

(192 citation statements)

References 63 publications

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“…(11) is a form of Fick's second law and yields an analytical solution, D i eff can be substituted into Eqs. (13) and (14). The standard solutions to Fick's second law are significant comparison tools utilized in the present paper as they are widely used to characterize experimental diffusion profiles.…”

Section: B Interstitial-limited Dissociative Diffusionmentioning

confidence: 99%

“…The diffusion-reaction form of the Fick's second law has been successfully applied to impurity diffusion in elemental semiconductors -Si:(Au and Zn), Ge:(Co, Cu, Ag, and Au). [11][12][13][14][15][16][17] Before discussing the simulation results, two pertinent analytical solutions are reviewed. 11…”

Section: A General Formulationmentioning

confidence: 99%

“…Diffusion mechanisms are intimately related to the concentrations of intrinsic and extrinsic point defects and their diffusion coefficients. [11][12][13][14][15][16][17] This paper concerns the dissociative diffusion mechanism (alternatively known as the FrankTurnbull mechanism) -where an impurity atom rapidly travels through interstitial sites before reacting with a vacancy -in vacancy-rich materials. 17 Two cases are studied where 1) the impurity interstitial diffusion is sufficiently rapid that vacancies are practically immobile, and 2) impurity interstitial diffusion becomes exceedingly fast that the concentration of impurity atoms in interstitial sites are maintained at the equilibrium value everywhere at all times, leading to the case where vacancy diffusion is the slowest process.…”

Section: Introductionmentioning

confidence: 99%

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Dissociative diffusion mechanism in vacancy-rich materials according to mass action kinetics

et al. 2016

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Two sets of diffusion-reaction numerical simulations using a finite difference method (FDM) were conducted to investigate fast impurity diffusion via interstitial sites in vacancy-rich materials such as Cu(In,Ga)Se2 (CIGS) and Cu2ZnSn(S, Se)4 (CZTSSe or CZTS) via the dissociative diffusion mechanism where the interstitial diffuser ultimately reacts with a vacancy to produce a substitutional. The first set of simulations extends the standard interstitial-limited dissociative diffusion theory to vacancy-rich material conditions where vacancies are annihilated in large amounts, introducing non-equilibrium vacancy concentration profiles. The second simulation set explores the vacancy-limited dissociative diffusion where impurity incorporation increases the equilibrium vacancy concentration. In addition to diffusion profiles of varying concentrations and shapes that were obtained in all simulations, some of the profiles can be fitted with the constant- and limited-source solutions of Fick’s second law despite the non-equilibrium condition induced by the interstitial-vacancy reaction. The first set of simulations reveals that the dissociative diffusion coefficient in vacancy-rich materials is inversely proportional to the initial vacancy concentration. In the second set of numerical simulations, impurity-induced changes in the vacancy concentration lead to distinctive diffusion profile shapes. The simulation results are also compared with published data of impurity diffusion in CIGS. According to the characteristic properties of diffusion profiles from the two set of simulations, experimental detection of the dissociative diffusion mechanism in vacancy-rich materials may be possible.

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Section: B Interstitial-limited Dissociative Diffusionmentioning

confidence: 99%

Section: A General Formulationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Dissociative diffusion mechanism in vacancy-rich materials according to mass action kinetics

et al. 2016

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“…As a simplification, we will ignore the I ++ state [1] and will describe the interstitial using the I + , I 0 , I -states, using the values listed in table I. These parameters are set to fit the experimental data of both I diffusion [13] and total silicon selfdiffusion [14].…”

Section: Physical Modelsmentioning

confidence: 99%

Physical modeling of Fermi-level effects for decanano device process simulations

Martín-Bragado

Pinacho

Castrillo

et al. 2004

Materials Science and Engineering: B

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We report on a physically-based Fermi-level modeling approach designed to be accurate and yet amenable to be implemented in a device-size process simulator. We use an atomistic kinetic Monte Carlo method in conjunction with a continuum treatment for carrier densities. results. This modeling scheme has proved to be very computationally efficient for realistic device-dimension process simulations. We present an illustrative set of simulation results for two common dopants, Boron and Arsenic, and discuss the potential of this approach for accurate process simulation of decanano CMOS devices. *Electronic address: ignacio.martin@tel.uva.es 1

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“…15 Including the effect of straininduced changes on vacancy formation energy, 16,17 our estimated equilibrium vacancy concentration in the SiGe layer is less than 1 ϫ 10 13 /cm 3 . This value is too low to account for any substantial H trapping.…”

mentioning

confidence: 99%

Plasma hydrogenation of strained Si∕SiGe∕Si heterostructure for layer transfer without ion implantation

Shao

Lin

Lee

et al. 2005

Applied Physics Letters

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Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions

Cited by 313 publications

References 63 publications

Dissociative diffusion mechanism in vacancy-rich materials according to mass action kinetics

Dissociative diffusion mechanism in vacancy-rich materials according to mass action kinetics

Physical modeling of Fermi-level effects for decanano device process simulations

Plasma hydrogenation of strained Si∕SiGe∕Si heterostructure for layer transfer without ion implantation

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