Properties of Liquid‐Phase Deposited Silica Films for Low‐k Dielectric Applications

Abstract

Both the electrical and mechanical properties of silica thin films deposited by liquid phase deposition (LPD) have been evaluated in this study. Silica thin films have been prepared on glass surface by immersing it in a supersaturated Hexafluorosilicic acid (H2SiF6)‐based solution at a low temperature of 50°C. The as‐deposited LPD silica films exhibit a low dielectric constant (k) that varies from 1.7 to 2.7 depending on the film morphology and fluorine content of the film. Young's modulus of these films was measured in the range of 18.9–24.5 GPa by a nanoindentation technique. The combination of extremely low k and fairly high modulus made this low‐temperature‐processed LPD silica films a very promising candidate for an interlayer dielectric film for the next‐generation semiconductor devices.

Properties and performance of spin‐on‐glass coatings for the corrosion protection of stainless steels in chloride media

“…Overall, the coating morphology deviates from the morphologies that can be achieved by competitive processes such as chemical vapor deposition, which does not significantly level substrate roughness, or liquid phase deposition, which yields inherently rough films. Due to the similarities in process characteristics, SOG‐deposition shows similarities in surface morphology to sol‐gel silica, which has previously shown excellent substrate leveling and a decrease in R a roughness of 45% with respect to untreated 2B finished stainless steel.…”