Properties of metal bolometers fabricated on porous silicon

Monticone, E.; Boarino, Luca; Lerondel, Gilles; Steni, R.; Amato, Giampiero; Lacquaniti, V.

doi:10.1016/s0169-4332(98)00685-0

Cited by 14 publications

(8 citation statements)

References 7 publications

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“…With such a high bandwidth, we could discard that the observed responsivity is due to thermal (bolometric) processes, 4 since this kind of processes have strong frequency dependence and quite long response time, determined by the thermal mass and thermal diffusivity of the material. 4,37 This observation is in contrast with the low-temperature sub-band gap photoresponse previously reported in S supersaturated Si, where the sub-band gap photoresponse of the S supersaturated device is reported to have a strong thermal component. 12 Measurement of the S n for the Ti supersaturated Si devices is shown and discussed in the supplementary material, 38 showing a 1/f 1 =2 -like noise behavior at lower frequencies and a white noise behavior at higher frequencies.…”

contrasting

confidence: 73%

Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector

García-Hemme

García-Hernansanz

Olea³

et al. 2014

Applied Physics Letters

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We report room-temperature operation of 1 × 1 cm2 infrared photoconductive photodetectors based on silicon supersaturated with titanium. We have fabricated these Si-based infrared photodetectors devices by means of ion implantation followed by a pulsed laser melting process. A high sub-band gap responsivity of 34 mV W−1 has been obtained operating at the useful telecommunication applications wavelength of 1.55 μm (0.8 eV). The sub-band gap responsivity shows a cut-off frequency as high as 1.9 kHz. These Si-based devices exhibit a non-previous reported specific detectivity of 1.7 × 104 cm Hz1/2 W−1 at 660 Hz, under a 1.55 μm wavelength light. This work shows the potential of Ti supersaturated Si as a fully CMOS-compatible material for the infrared photodetection technology.

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contrasting

confidence: 73%

Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector

García-Hemme

García-Hernansanz

Olea³

et al. 2014

Applied Physics Letters

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“…Since then, PS was widely studied from the viewpoint of a luminescent material [2] as well as buried waveguides [3], antireflective coatings for silicon-based solar cells [4] and gas sensors [5]. In recent years, it was reported that PS formed on single crystalline silicon acts as an ultrasonic emitter [6,7] as well as a heat insulation layer [8]. We applied PA spectroscopy to the estimation of the thermal conductivity of PS in the depth direction.…”

Section: Introductionsupporting

confidence: 91%

Thermal Conductivity of Porous Silicon Evaluated from Phase Characteristics of Photoacoustic Spectroscopy

2004

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Porous silicon (PS), well known as a visible luminescent material, has been revealed to be an attractive candidate for an ultrasonic emitter recently. Since the ultrasonic emission is based on a thermal process it is important to evaluate thermal properties of PS. We then evaluated the thermal conductivity of PS from the phase delay in a photoacoustic (PA) signal. We report the dependence of thermal conductivity on anodization time in forming PS.

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“…The reference data for the bulk samples (Table 1) differ by several times [4]. In particular, the obtaining of Nb films several tens of nanometers in thickness leads to the decrease in TCR (2-3 times), and the electrical resistivity increases approximately by 2-3 times [8], [16]. Therefore, to compare the sensitivity of the bolometers according to Eq.…”

Section: Estimationsmentioning

confidence: 99%

Perspective Material and Applications of Uncooled Metal Bolometers

Vybornov

Andreev

2016

IEEE Sensors J.

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Abstract-A new method is proposed to compare the sensitivity of uncooled metal bolometers. This method allows us to conduct a comparative analysis for the sensitivity of uncooled bolometers with metal and metal alloy resistive elements. The experiments showed a twofold superiority in the sensitivity of the TiNi alloy based bolometer with a resistive element less than 10 Ω in resistance over the identical bolometers based on technologically applicable metals due to improved electrophysical properties. The Ti50.5Ni49.5 bolometer developed to measure the total solar radiation has a higher sensitivity, a higher measuring efficiency, a smaller weight and size compared to a serial CMP-11 pyranometer, as well as the best environmental protection. The highly sensitive uncooled metal bolometers are shown to be used as an integral part of the optical absorption gas analyzer to provide the control of background mercury vapors in the atmosphere.Index Terms-Bolometers, sensitivity, thin films, titanium alloys, power measurement, sensor systems and applications.

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Properties of metal bolometers fabricated on porous silicon

Cited by 14 publications

References 7 publications

Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector

Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector

Thermal Conductivity of Porous Silicon Evaluated from Phase Characteristics of Photoacoustic Spectroscopy

Perspective Material and Applications of Uncooled Metal Bolometers

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