Properties of n-type ZnN thin films as channel for transparent thin film transistors

Aperathitis, E.; Kambilafka, V.; Modreanu, M.

doi:10.1016/j.tsf.2009.01.155

Cited by 34 publications

(18 citation statements)

References 21 publications

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“…Our calculated value (2.81 eV) for the band gap of zinc nitride hollow-structures is larger than many reported values from 0.9 to 2.12 eV [24,27,36,[41][42][43]. Various other investigations have reported larger values such as 3.4 [25], 3.2 [30], 3.22 [33] and 3.2 eV [44,45]. Terbium (Tb)-doped zinc nitride has also been recently reported which exhibited a band gap of 2.4 eV [46].…”

Section: Resultscontrasting

confidence: 86%

Synthesis, growth mechanism and optical characterization of zinc nitride hollow structures

Khan

Cao

2010

Journal of Crystal Growth

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Section: Resultscontrasting

confidence: 86%

Synthesis, growth mechanism and optical characterization of zinc nitride hollow structures

Khan

Cao

2010

Journal of Crystal Growth

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“…I D,sat was represented as a function of V GS at V DS ¼ 25 V (saturation region) and using the slope of that function, l FE was calculated to be 0.02 cm 2 /Vs. This value agrees well with that reported in the literature before 5 and was still low in comparison with those obtained in TFTs based on other materials such as a-ZnO (25 cm 2 /Vs) 12 or GaN (1 cm 2 /Vs). 13 This can be associated to the high dimensions of the bottomgate device which yield a high current leakage from the gate through the dielectric layer reducing the effective current between drain and source.…”

Section: à3supporting

confidence: 92%

“…4 Zn 3 N 2 thin films have been tested as channel layers in thin film transistors after an annealing process, which made the Zn 3 N 2 layer transparent to the visible light. 5 In this work, TFTs with different geometric configurations, bottom-and top-gate, were fabricated by lithography and etching processes using Zn 3 N 2 as active channel layer. Their output characteristics were studied as-fabricated (without thermal treatment) in dark and under infrared/visible illumination.…”

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confidence: 99%

Thin film transistors based on zinc nitride as a channel layer for optoelectronic devices

García-Núñez

Pau

Ruiz

et al. 2012

Applied Physics Letters

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Zinc nitride films were used as an active layer in thin film transistors to assess its performance in optoelectronic applications. Those nitride layers were grown by radio-frequency magnetron sputtering in Ar/N 2 ambient using a Zn target. Bottom-and top-gate thin film transistors were fabricated by photolithography processes. Transmission measurements for these particular layers showed an absorption edge around 1.3 eV. Normally off transistor characteristics with a threshold voltage of 6 V were obtained in the bottom-gate configuration without post-growth annealing. In the saturation region, those transistors produced enhanced output characteristics under illumination with infrared/visible light. Thin film transistors (TFTs) are essential devices in active-matrix liquid crystal and organic light-emitting diode displays. Although hydrogenated amorphous silicon is usually the material of choice for the TFT channel, this technology presents some issues such as the low mobility or the poor levels of stability.1,2 TFTs are also based on polycrystalline silicon with an important enhancement of the field effect mobility in comparison with those based in a-Si; however, the randomly distributed grain boundaries in a high area can hinder the fabrication process.3 Therefore, different organic and inorganic materials are being investigated as potential substitutes of Si. One of them is zinc nitride (Zn 3 N 2 ), which is potential candidate due to its high mobility (156 cm 2 /Vs) and conductivity as well as its low-cost processing. 4 Zn 3 N 2 thin films have been tested as channel layers in thin film transistors after an annealing process, which made the Zn 3 N 2 layer transparent to the visible light. 5In this work, TFTs with different geometric configurations, bottom-and top-gate, were fabricated by lithography and etching processes using Zn 3 N 2 as active channel layer. Their output characteristics were studied as-fabricated (without thermal treatment) in dark and under infrared/visible illumination. Zn 3 N 2 layers were synthesized by radio-frequency (rf) magnetron sputtering from a Zn target. Deposited on glass substrates, those layers presented excellent electrical properties with n-type characteristics, Hall mobility values around 100 cm 2 /Vs for an electron concentration of 3.2 Â 10 18 cm À3 , and resistivities in the 10 À3 X cm range. 6 Since Zn 3 N 2 tends to transform into zinc oxide (ZnO) at room temperature and atmospheric pressure, 7 the channel layers were capped with a ZnO thin layer which inhibits the reaction with the ambient oxygen and increases the stability of the devices overtime. Optical properties of those nitride layers were analyzed here by means of transmission spectroscopy in the photon energy range from 1 to 3 eV. The morphology of the Zn 3 N 2 sample surfaces was examined by scanning electron microscopy (SEM, Philips XL30) at 20-kV operation voltage.Bottom-gate TFT was first fabricated using mechanical masking and photolithography processes. A cross-sectional schematic of the fabricated trans...

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“…They concluded that wide band gap is due to large ionicity of Zn 3 N 2 . Zn 3 N 2 is a better substitute of Si for fabrication of thin-film transistors (TFT) than other materials like zinc oxide and graphene [9–11]. The fabrication of a reliable p-type ZnO is still an unresolved issue; there have been different attempts of doping ZnO with different group V elements.…”

Section: Introductionmentioning

confidence: 99%

XPS Depth Profile Analysis of Zn3N2 Thin Films Grown at Different N2/Ar Gas Flow Rates by RF Magnetron Sputtering

Haider

2017

Nanoscale Res Lett

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Zinc nitride thin films were grown on fused silica substrates at 300 °C by radio frequency magnetron sputtering. Films were grown at different N2/Ar flow rate ratios of 0.20, 0.40, 0.60, 0.80, and 1.0. All the samples have grain-like surface morphology with an average surface roughness ranging from 4 to 5 nm and an average grain size ranging from 13 to16 nm. Zn3N2 samples grown at lower N2/Ar ratio are polycrystalline with secondary phases of ZnO present, whereas at higher N2/Ar ratio, no ZnO phases were found. Highly aligned films were achieved at N2/Ar ratio of 0.60. Hall effect measurements reveal that films are n-type semiconductors, and the highest carrier concentration and Hall mobility was achieved for the films grown at N2/Ar ratio of 0.60. X-ray photoelectron study was performed to confirm the formation of Zn–N bonds and to study the presence of different species in the film. Depth profile XPS analyses of the films reveal that there is less nitrogen in the bulk of the film compared to the nitrogen on the surface of the film whereas more oxygen is present in the bulk of the films possibly occupying the nitrogen vacancies.

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Properties of n-type ZnN thin films as channel for transparent thin film transistors

Cited by 34 publications

References 21 publications

Synthesis, growth mechanism and optical characterization of zinc nitride hollow structures

Synthesis, growth mechanism and optical characterization of zinc nitride hollow structures

Thin film transistors based on zinc nitride as a channel layer for optoelectronic devices

XPS Depth Profile Analysis of Zn3N2 Thin Films Grown at Different N2/Ar Gas Flow Rates by RF Magnetron Sputtering

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