Properties of p-type N-doped Cu<sub>2</sub>O thin films prepared by reactive sputtering

Jung, Yu Sup; Choi, Hyung Wook; Kim, Kyung Hwan

doi:10.7567/jjap.53.11ra10

Cited by 20 publications

(12 citation statements)

References 27 publications

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“…Research on Cu 2 O has a long history, and the fabrication of Cu 2 O thin films or nanostructures has been widely reported by various techniques, such as PLD, magnetron sputtering, and thermal oxidation; and chemical routes, such as electrodeposition, spin coating, atomic‐layer deposition, spray coating, molecular‐beam epitaxy, microwave irradiation from a Cu precursor, chemical vapor deposition, and ink printing . A summary of the most promising studies on binary copper oxide thin films is shown in Table 2 .…”

Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

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The development of transparent p-type oxide semiconductors with good performance could be a true enabler for a variety of applications, where transparency, power efficiency and more circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, we review recent developments in materials and devices based on p-type oxide semiconductors, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides and nickel oxides. The crystal and electronic structures of these materials are reviewed, along with approaches to enhance valence band dispersion to reduce effective mass and increase mobility.Strategies to reduce the interfacial defects, off state current, and material instability are discussed. Furthermore, we show that promising progress has been made in the performance of various type of devices based on p-type oxides. For example, transparent oxide-based p-n junction diodes have experienced significantly improved performance, where rectification ratios >10 7 have been achieved. The performances of thin-film transistors and inverters have also been modestly improved. For example, thin-film transistors with field-effect mobilities exceeding 5 cm 2 V -1 s -1 have been reported. In addition, several innovative approaches were developed to fabricate transparent complementary metal oxide semiconductor (CMOS) 2 devices. These approaches include novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains (as high as 120 has been demonstrated).Some progress has also been made in reducing the interfacial defects and off state currents using capping layers, high quality dielectrics and surface treatments. Resistive memory devices and hole transport layer in optoelectronic devices, mostly based on nickel oxide, have made decent progress. Transparent ferroelectric memory devices comprising p-type oxides have also been reported recently showing good hole mobilities (~3.3 cm 2 V -1 s -1 ) and good retention characteristics. This even includes multistate memory devices that show good stability. Nanoscale (e.g. nanowire) devices have now been reported using p-type oxides and do show performance improvements at scaled device geometry. New process developments have been reported, and some p-type oxides can now be deposited using atomic layer deposition and chemical routes, with promising performances. However, despite these recent developments, p-type oxides still lag in performance behind the n-type counterparts, which have entered volume production in the display market. The recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented in this review.

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Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

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“…17,18 Many efforts have been made, both theoretically and experimentally, to address the influence of incorporation of N dopants in Cu 2 O. [19][20][21][22][23][24][25] It has been also shown that the structural, electrical, and optical properties of Cu 2 O are strongly influenced by N incorporation. 22 However, despite the higher predicated theoretical conversion efficiency than Cu 2 O, no comprehensive investigation has yet been conducted to address the influence of N incorporation in CuO.…”

Section: Optical Bandgap Widening and Phase Transformation Of Nitroge...mentioning

confidence: 99%

Optical bandgap widening and phase transformation of nitrogen doped cupric oxide

Masudy‐Panah

Radhakrishnan

Kumar

et al. 2015

Journal of Applied Physics

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The structural and optical properties of sputter deposited nitrogen (N) doped CuO (CuO(N)) thin films are systematically investigated. It is found that the incorporation of N into CuO causes an enlargement of optical bandgap and reduction in resistivity of the CuO(N) films. Furthermore, a gradual phase transformation from CuO to Cu2O is observed with the increase in N concentration. The effects of annealing temperature on the structural properties of CuO (N) and its dependence on N concentration are also investigated. It is observed that the phase transformation process from CuO to Cu2O significantly depends on the N concentration and the annealing temperature. Heterojunction solar cells of p-type CuO(N) on n-type silicon (Si) substrate, p-CuO(N)/n-Si, are fabricated to investigate the impact of N doping on its photovoltaic properties.

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“…Paper VI and Refs. 76,95,166), but most reported as-deposited Cu 2 O thin film mobilities are below 10 cm 2 /Vs [80,82,83,[167][168][169][170][171][172]. A common way of improving the electrical, optical and structural characteristics of semiconductors is through heat treatment, since the excess energy provided to the lattice annihilates point and extended defects, improves the crystallinity, and reduces In Paper VII, reactively RF sputtered Cu 2 O thin films are RTA treated at 600 • C, 700 • C, 800 • C, and 900 • C for 3 min in a p O 2 of 10 Pa, and subsequently, their structural, optical, and electrical properties are probed by XRD, Scanning Electron Microscopy (SEM), UV-VIS spectroscopy, PL spectroscopy and Hall effect measurements.…”

Section: Homoepitaxial Growth Of Zno By Rf-magnetron Sputteringmentioning

confidence: 99%

Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials

Riise

Schumann

Azarov

et al. 2015

Applied Physics Letters

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This thesis explores various processing and materials aspects of an oxide solar cell. A tandem structure consisting of a Silicon (Si) bottom cell, and a Cuprous Oxide (Cu 2 O)/Zinc Oxide (ZnO) top cell is suggested, and several materials challenges relevant for the design is addressed. Using Flash Lamp Annealing, shallow p-type emitters are produced in Si by indiffusion of Boron (B) from a surface source. The B diffusion is shown to be enhanced by a transient of Si interstitials originating from the surface coating. The n ++-side of a Si tunneling junction is realized by sputter depositing highly Phosphorus (P) doped Si thin films on quartz. The P activation and thin film conductivity are highest after prolonged, high temperature annealing, and thin film roughness is significantly reduced after a Reactive Ion Etch treatment of the quartz substrates. A rectifying Cu 2 O/Si heterojunction is demonstrated, and most of its depletion layer is located in Si showing that the acceptor concentration in the sputtered Cu 2 O is significantly higher than 1.1×10 17 cm −3. Epitaxial growth of Cu 2 O is realized on single crystal ZnO, and XRD measurements reveal that the Cu 2 O grows in two separate [111]-oriented domains which are rotated 180 • relative to each other. Further, a thin, detrimental layer of CuO is evidenced by TEM at the interface between the sputtered Cu 2 O and the ZnO single crystal. Homoepitaxial sputter growth of ZnO is investigated in some detail, and the growth is found to depend on sputter target power density, substrate polarity, and growth ambient. Specifically, c-axis growth is promoted when growing on the Zn-face of ZnO, while slower, in-plane growth is promoted during O-face growth and during growth in a Nitrogen ambient. Treating sputter grown Cu 2 O thin films by Rapid Thermal Annealing is demonstrated by XRD, PL and Hall effect measurements to be highly beneficial for the thin film structural quality. Finally, two band gap defects in Cu 2 O are revealed using Temperature Dependent Hall effect measurements, and the defect ionization energy values are found to be dependent on sample strain.

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Properties of p-type N-doped Cu₂O thin films prepared by reactive sputtering

Cited by 20 publications

References 27 publications

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Optical bandgap widening and phase transformation of nitrogen doped cupric oxide

Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials

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Properties of p-type N-doped Cu2O thin films prepared by reactive sputtering

Cited by 20 publications

References 27 publications

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Optical bandgap widening and phase transformation of nitrogen doped cupric oxide

Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials

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Properties of p-type N-doped Cu₂O thin films prepared by reactive sputtering