Properties of PbS thin films grown on glass and layered GaSe crystal substrates by chemical bath deposition

Karabulut, Mevlüt; Ertap, Hüseyin; Mammadov, Hasan; undefined, Güventürk UĞURLU; Öztürk, Mustafa Kemal

doi:10.3906/fiz-1301-1

Cited by 8 publications

(4 citation statements)

References 34 publications

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“…Figure C shows the XRD pattern, in which the diffraction peaks labeled in blue can be indexed as rhombohedral structured GaSe phase with lattice parameters of a = b = 3.746 nm, c = 23.910 nm and a space group of R 3 m (PDF no. 65-2112). − The mica phase, with peaks labeled in magenta, has lattice parameters of a = 5.369 nm, b = 9.289 nm, c = 10.153 nm and a space group of C 2/ m (PDF no. 53-1188).…”

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“…Figure 1C is the XRD pattern, in which the diffraction peaks in blue can be indexed as rhombohedral structured GaSe phase with lattice parameters of a = b = 3.746 nm, c = 23.910 nm and a space group of R3m (PDF#65-2112). [26][27][28] The mica phase presented in magenta has lattice parameters of a =5.369 nm, b =9.289 nm, c =10.153 nm and a space group of C2/m (PDF#53-1188). It is of interest to note that all diffraction peaks from the GaSe correspond to the (003), (006), (0012) and (0015) planes, confirming the [0001] growth direction of GaSe thin film.…”

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Arrayed van der Waals Vertical Heterostructures Based on 2D GaSe Grown by Molecular Beam Epitaxy

et al. 2015

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Vertically stacking two dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures in wafer scale with an atomically-sharp interface poses an unprecedented challenge. Here, we demonstrate a convenient and controllable approach for the production of wafer-scale 2D GaSe thin films by molecular beam epitaxy. In-situ reflection high-energy electron diffraction oscillations and Raman spectroscopy reveal a layer-by-layer van der Waals epitaxial growth mode.Highly-efficient photodetector arrays were fabricated based on few-layer GaSe on Si.These photodiodes show steady rectifying characteristics and a high external quantum efficiency of 23.6%. The resultant photoresponse is super-fast and robust with a response time of 60 μs. Importantly, the device shows no sign of degradation after 1 million cycles of operation. We also carried out numerical simulations to understand the underlying device working principles. Our study establishes a new approach to produce controllable, robust and large-area 2D heterostructures and presents a crucial step for further practical applications.

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Arrayed van der Waals Vertical Heterostructures Based on 2D GaSe Grown by Molecular Beam Epitaxy

et al. 2015

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“…It has been recommended as an earth abundant sustainable material for affordable photovoltaic devices [7]. PbS has a narrow direct band gap of 0.41 eV at room temperature and an optical absorption coefficient of 10 5 cm −1 [8]. Both p-type and n-type PbS compounds can be made by doping [9].…”

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confidence: 99%

The effect of the concentration of tin (Sn) in the metallic precursor, on the structure, morphology, optical and electrical properties of electrochemically deposited lead-tin-sulphide (PbSnS) thin films

Nkrumah¹,

Ampong²,

Britwum³

et al. 2023

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A study has been carried out to investigate the effect of the concentration of Sn in the metallic precursor on the structure, morphology, optical and electrical properties of PbSnS thin films. The films were directly electrodeposited on ITO-coated glass substrates using a 3-electrode electrochemical cell having graphite as the counter electrode and Ag/AgCl as the reference electrode. Several depositions were carried out, with each deposited film having a different concentration of Sn in the metallic precursor whilst all other parameters were kept constant for all the films. Post deposition annealing was carried out in air at 250 o C for an hour. A variety of techniques were used to characterize the films. Results showed that the increase in Sn concentration did not modify the structure and preferred orientation of the films. However, it caused a slight increase in the average grain size of the films and electrical conductivity. All the films showed direct transition with the optical band gap reducing with increasing Sn concentration. The refractive index of the films showed anomalous dispersion behaviour within the UV region, and normal dispersion in the visible and infrared regions, whilst following an increasing trend with the grain size. SEM image showed spherically shaped grains of different sizes distributed randomly with good coverage across the entire area of the substrate. The EDAX spectrum was consistent with formation of the ternary PbSnS compound on ITO-coated glass substrate. Overall results indicate that, the optical and electrical properties of the electrochemically deposited PbSnS thin films can be tuned to make them suitable for specific applications by varying the concentration of Sn in the metallic precursor.

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“…When we look inside these islands, we see that they consist of particles of different shapes and sizes (Figure 2b). The grain size of the film is calculated from the XRD data using the Scherrer equation [22,23]: …”

Section: Imentioning

confidence: 99%

Structural and optical properties of gallium sulfide thin film

Ertap¹,

Baydar²,

Yüksek³

et al. 2016

Turk J Phys

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Structural, morphological, and optical properties of gallium sulfide film grown by chemical bath deposition have been investigated by XRD, SEM, AFM, and optical absorption techniques. The XRD spectrum indicated that the gallium sulfide film grew in crystalline form and the phase was identified as GaS. Gallium sulfide film had an island-like structure with a random distribution on a glass substrate. The particle size of the crystallites and surface roughness of the film were found to be 28-48 nm and 11.84 nm, respectively. The direct and indirect band gaps of gallium sulfide thin film were calculated from the absorption spectra as 2.76 and 2.10 eV, respectively.

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Properties of PbS thin films grown on glass and layered GaSe crystal substrates by chemical bath deposition

Cited by 8 publications

References 34 publications

Arrayed van der Waals Vertical Heterostructures Based on 2D GaSe Grown by Molecular Beam Epitaxy

Arrayed van der Waals Vertical Heterostructures Based on 2D GaSe Grown by Molecular Beam Epitaxy

The effect of the concentration of tin (Sn) in the metallic precursor, on the structure, morphology, optical and electrical properties of electrochemically deposited lead-tin-sulphide (PbSnS) thin films

Structural and optical properties of gallium sulfide thin film

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