Properties of probe tip/Si contacts and their connection to spreading resistance analyses

Gaworzewski, P.

doi:10.1116/1.588477

Cited by 3 publications

(3 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…There is some apparent filling up of the valleys between the delta peaks up to a level of about 5ϫ10 18 cm Ϫ3 , i.e., above the measured total B concentration; the reason for this behavior is related to problems of probe tip penetration. 18 A heat treatment of 900°C, 5 min leads to an almost constant N net across the SiGe layer of about ͑4 -5͒ϫ10 19 FIG. 7.…”

Section: Resultsmentioning

confidence: 98%

“…The main reason for this behavior is connected with mechanical probe tip penetration and the formation of a metallic Si phase zone. 18 Current SR analyses do not take into consideration the phenomenon of penetration sufficiently. The effect is especially pronounced on the leading edge of the dopant spike but not on the trailing edge.…”

Section: Resultsmentioning

confidence: 99%

“…18. SIMS, spreading resistance, and Hall effect measurements were repeated after different heat treatments to find out the influence of the annealing on dopant distribution and electrical activity of B.…”

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Characterization of B and Sb delta-doping profiles in Si and Si1−xGex alloys grown by molecular-beam epitaxy

Krüger

Gaworzewski

Kurps

et al. 1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Boron and antimony deltalike doping spikes in Si and Si1−xGex layers with x=0 to x=0.25 deposited by molecular-beam epitaxy (MBE) have been investigated as candidates for p and n delta- doping MBE technology. They were characterized by high depth resolution secondary ion mass spectrometry (IMS) measureements using oxygen and cesium primary ion beams in the energy range from 2 to 12 keV and by high depth resolution spreading resistance measurements. Deltalike doping profiles with a full width at half-maximum of less than 2.7 and 3 nm have been measured by SIMS for Sb and B, respectively, with corresponding upward slopes of 0.4 and 1 nm. For Si1−xGex growth segregation effects, the electrical activity of B decreases with increasing Ge content, and the steepness of the B spikes increases. The behavior of B spikes during annealing is investigated.

show abstract

Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Characterization of B and Sb delta-doping profiles in Si and Si1−xGex alloys grown by molecular-beam epitaxy

Krüger

Gaworzewski

Kurps

et al. 1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

Space Charge Evaluation in a Plasma-Source Mass Spectrograph

1997

View full text Add to dashboard Cite

Space charge effects, and the matrix interferences they cause, are problems in inductively coupled plasma mass spectrometry (ICPMS). It has previously been observed that these deleterious space charge effects are not significantly present in sector-field instruments, a fact that has been attributed, but not demonstrated, to the high accelerating potentials they commonly employ. To examine the significance of space charge in our plasma-source mass spectrograph (which operates at only moderate accelerating potentials) and in other sector instruments, a graphite disk was placed approximately 7 cm behind the skimmer. An inductively coupled plasma was operated for 17 h while a 0.01 mM multielement solution was introduced. This disk was then analyzed by spatially resolved laser ablation ICP time-of-flight MS. Second vacuum-stage acceleration appears to be an important factor that governs the elemental distribution within the ion beam. The ion beam width at m/z 208 is one-third of its width at m/z 7 using an accelerating potential of 800 V; at an accelerating potential of 4000 V, the ion beam width does not vary with mass.

show abstract

Electrical characterization of shallow pn junctions

Gaworzewski¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

In this article we present results of calculations and experiments concerning the characterization of pn junctions with depths x J Ͻ100 nm. Simulations of differential Hall effect profiling with model dopant profiles as input demonstrate that this method can be used to analyze dopant profiles in pn structures, if it is known how the p and n regions of the pn junction are contacted. Results of differential Hall effect simulations obtained with the same model dopant profile as input strongly depend on the kind of the contact to the p and n regions of the junction. The results reveal that differential Hall effect analysis can be accurate with respect to the dopant profile and to the junction depth if Ohmic contacts are formed to both regions of the junction. The shift in the position of the apparent pn junction relative to the metallurgical pn junction is estimated for the case that contact is made to one of the regions. Spreading resistance, differential Hall effect measurements, and chemical staining of beveled samples are used to characterize pn junctions experimentally. Determining pn junction depths we find an error of about 5 nm using spreading resistance measurements and differences of more than 10 nm using conventional chemical staining.

show abstract

Properties of probe tip/Si contacts and their connection to spreading resistance analyses

Cited by 3 publications

References 7 publications

Characterization of B and Sb delta-doping profiles in Si and Si1−xGex alloys grown by molecular-beam epitaxy

Characterization of B and Sb delta-doping profiles in Si and Si1−xGex alloys grown by molecular-beam epitaxy

Space Charge Evaluation in a Plasma-Source Mass Spectrograph

Electrical characterization of shallow pn junctions

Contact Info

Product

Resources

About