Properties of pulse plated SnSe films

Abstract

In this work, the pulse electrodeposition technique has been employed for the first time to deposit SnSe films from a bath containing Analar grade 50 mM tin chloride (SnCl 4 ) and 5 mM SeO 2 . The XRD profile of SnSe thin films deposited at different duty cycles indicate the peaks corresponding to SnSe. Atomic force microscopy studies indicated that the surface roughness increased from 0.5 to 1.5 nm with duty cycle. The transmission spectra exhibited interference fringes. The value of refractive index at 780 nm was 2.1, this value decreased to 1.95 with decrease of duty cycle. The room temperature resistivity increased from 0.1 to 10 Xcm with decrease of duty cycle. Photo electrochemical cell studies were made using the films deposited at different duty cycles. For duty cycles greater than 15% photo output was observed. For a film deposited at 50% duty cycle, an open circuit voltage of 0.55 V and a short circuit current density of 5.0 mA cm -2 at 60 mW cm -2 illumination. Capacitance voltage measurements indicated V fb = 0.67 V (SCE) and p type, carrier density = 6.98 9 10 16 cm -3 .

Robust scalable synthesis of surfactant-free thermoelectric metal chalcogenide nanostructures

“…The average particle size is 9.3 ± 1.7 nm [ Figure S14 Figure S14(c)]. [72] Characterizations of Ag2Se nanoparticles are presented in Figure S15, which shows that the morphology of Ag2Se is bigger and non-uniform in comparison with those of the other metal chalcogenide nanostructures; the binding energies of Ag 3d and Se 3d are consistent with those of reported Ag2Se. [73] The dried nanopowders were consolidated into pellets by the SPS technique, and the sintering parameters and relative density are listed in Table S7.…”

Solution-Based Synthesis and Processing of Metal Chalcogenides for Thermoelectric Applications

“…This electrochemical synthesis process is scalable, simple, rapid, and cost-effective and it gives great control of the thickness, crystallinity, composition, and morphology. Electrodeposition has been extensively applied to fabricate various metal chalcogenide thermoelectric materials (Figure 7), such as Bi 2 Te 3 films [59,72,73,[82][83][84][85][86][87][88][89], Bi 2 Te 3 nanowire arrays [90][91][92][93], Bi 2 Te 3 nanotube arrays [94], Cu 2 Te films [95,96], Cu 2 Te nanowires [97], SnSe films [98][99][100][101], and so on.…”

“…2019, 9, x FOR PEER REVIEW 9 of 19 composition, and morphology. Electrodeposition has been extensively applied to fabricate various metal chalcogenide thermoelectric materials (Figure 7), such as Bi2Te3 films [59,72,73,[82][83][84][85][86][87][88][89], Bi2Te3 nanowire arrays [90][91][92][93], Bi2Te3 nanotube arrays [94], Cu2Te films [95,96], Cu2Te nanowires [97], SnSe films [98][99][100][101], and so on. (h) cross-sectional views of the electrodeposited SnSe films.…”

High-performance SnSe thermoelectric materials: Progress and future challenge

“…The average crystallite size of the as-synthesized SnSe was determined to be ~42 nm using Williamson-Hall method[90]. Apart from XRD, XPS can also be used to analyze the phase of SnSe[81,[264][265][266].Figure 25(b)shows a partial high resolution XPS spectrum of SnSe synthesized via solvothermal route[81], indicating the existence of one valence state for Sn and Se. The peaks of Sn 3d 3/2 and Sn 3d 5/2 were singlet and no accessorial binding energy peaks can be found, indicating the divalent characteristic of Sn ions, and a binding energy peak of Se 3d was also observed at 53.7 eV, suggesting Se 2+[81].To determine the compositional ratio of Sn and Se in the materials, EDS[267][268][269] and high-resolution electron probe micro-analysis (EPMA)[81,91,128,257] are commonly used.Figure 25(c)shows a typical EDS spot analysis of SnSe synthesized by microwave-assisted solvothermal route, the atomic ratio of Sn and Se was roughly 1:1.…”