Articles you may be interested inEffect of crystal orientation on the phase diagrams, dielectric and piezoelectric properties of epitaxial BaTiO3 thin films AIP Advances 6, 015309 (2016) (110) substrates is presented. X-ray diffraction measurements demonstrate that all films are grown epitaxially. The tensile in-plane strain is only partially compensated by a contraction of the out-of-plane lattice parameter. As a result, the volume of the unit cell of the Sr 1Àx Ba x TiO 3 film increases due to the tensile strain, and the resulting Poisson ratio of the film is % 0.33, which is larger than but still close to the literature values of % 0.23 for unstrained defect-free SrTiO 3 . The Curie temperature derived from the temperature dependence of the in-plane dielectric response leads to a straintemperature phase diagram for the epitaxial Sr 1Àx Ba x TiO 3 films. The experimental data show a deviation from the linear dependence predicted by the Landau thermodynamic theory for large strain (>1.2%). However, using the equilibrium thermodynamic analysis, we can demonstrate that this deviation arises from the relaxation of the strain due to defect formation in the film. The result reveals that in addition to the nominal misfit strain, the defect formation strongly affects the effective strain and, thus, the dielectric response of epitaxially grown ferroelectric films. Published by AIP Publishing.[http://dx