Properties of reactively sputtered WN x as Cu diffusion barrier

Thermal stability of AlCoCrCuFeNi high entropy alloy thin films studied by in-situ XRD analysis

“…Moreover, SEM analysis observations evidence the presence of holes and kinds of inclusions (Fig. 5) which are characteristics of silicide formation [13]. This confirms the formation of Cu3Si rather than a Ni silicide.…”

Influence of thickness on the material characteristics of reactively sputtered W2N layer and electrical properties of W/W2N/SiO2/Si capacitors

“…It is attributed to the decrease of lattice constant of the 500 • C-annealed W 2 N film. In addition, it has been reported that WN x thin films will loose nitrogen and transform to W upon high temperature annealing [13,14]. Hence, we suggest that the nitrogen atoms in the W 2 N lattice are partly released after annealing.…”

Initial growth of W‐based films deposited on Si studied with ARXPS

“…Despite the information from the literature regarding the observed WN x peak positions are not consistent; [16 -18] both stoichiometry WN x (x ∼ 1.3 in the thick film) and the peak positions of ∼33 eV for W4f 7/2 and of ∼397 eV for N1s [19] point rather to a film stoichiometry between WN and WN 2 than to the W 2 N phase mostly reported for standard sputtering deposition. [15,16,18] The reason for that can be the very low deposition rates used in our case, which may lead to a preferred incorporation of the excited nitrogen from the plasma. A definitive answer to the reached WN x structure could be given with X-ray diffraction investigations at thicker layers, which was not done up to now.…”

“…Many investigations were done on the topic of sputter deposition of W-based thin films and their structural characterization (e.g. Refs [4,[14][15][16][17][18]), but only a few papers dealt with interface properties [19,20] in particular. Thus we now focus our interest on XPS studies of interface reactions that may occur during the growth of such films on Si substrates.…”