Properties of Si[sub x]O[sub y]N[sub z] Films on Si

Brown, D.M.; Gray, P.R.; Heumann, F.K.; Philipp, H. R.; Taft, E. A.

doi:10.1149/1.2411151

Cited by 171 publications

(43 citation statements)

References 19 publications

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“…1(a). The valence/conduction band offset ( ) is known for Si/SiO (4.50 eV/3.15 eV) and Si/Si N (1.90 eV/2.1 eV) [4], and the dielectric constant for SiO (3.9) and Si N (7.8) [2], [10], [11]. A linear interpolation [2], [10], [11] is used to obtain both dielectric constant of oxynitrides and the values for Si/Oxynitrides.…”

Section: Resultsmentioning

confidence: 99%

Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs

Hónɡ

Hou

et al. 2002

IEEE Electron Device Lett.

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A systematic study on hole-tunneling current through both oxynitride and oxynitride/oxide (N/O) stack is for the first time presented based on a physical model. The calculations are in good agreement with the available experimental data. With a given equivalent oxide thickness (EOT), and under typical operating gate voltages ( 2 V), hole-tunneling current (essentially the gate current) is found to be lowest through the oxynitride or N/O stack with 33% of nitrogen (N). An optimized N/O stack structure with 33% (atomic percentage) nitrogen and with a 3 Å oxide layer for keeping acceptable channel interface quality is proposed to project the N/O gate dielectrics scaling limit using in MOSFETs. Index Terms-Dielectric films, hole tunneling, MOSFETs, oxynitride/oxide (N/O), silicon oxynitrides.

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Section: Resultsmentioning

confidence: 99%

Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs

Hónɡ

Hou

et al. 2002

IEEE Electron Device Lett.

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“…A linear fit (least squares fitting algorithm = 0:06) to the data marked by circles intercepts the t =EOT axis at 1.0. The positive slope is consistent with a dielectric constant which increases with increasing N [10], [12]. Data marked by triangles are not used in the calculation of fit constants.…”

Section: B Gate Leakagementioning

confidence: 69%

“…Physical models are developed to relate XPS data to device data, with the assumption that the relevant physical parameters of the oxynitride films vary linearly with nitrogen content [10]- [12]. Here, the relative dielectric constant , the tunneling effective mass , and the energy barrier height for oxynitrides are assumed to have the forms of (1)-(3), where , , and are constants with the following properties: [10], [12], [11], and [10], [12]. Similar assumptions have previously been used to calculate oxynitride tunneling current-voltage curves [13] and [5].…”

Section: Sample Fabrication and Measurementmentioning

confidence: 99%

Physical models for predicting plasma nitrided Si-O-N gate dielectric properties from physical metrology

Kraus

Ahmed

Olsen

et al. 2003

IEEE Electron Device Lett.

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Using simple physical models, specific relationships between parameters measured by X-ray photoelectron spectroscopy (XPS) and those measured on MOS transistors are described for silicon oxynitride gate dielectrics prepared by plasma nitridation. Correlations are established between the equivalent oxide thickness ( ) and gate leakage current and the nitrogen anneal dose and physical thickness as measured by XPS. These correlations, from devices in the 10 to 13 A range, allow accurate estimates of electrical thickness and leakage without device fabrication, enabling both development and process monitoring for sub-130-nm node gate dielectrics. Index Terms-Direct tunneling,, gate dielectric, silicon oxynitride, X-ray photoelectron spectroscopy.

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“…[27] The refractive index of SiO x N y can be tailored from that of SiO 2 (n ∼ 1.5) to that of Si 3 N 4 (n ∼ 2.0) by adjusting the O/N ratio in the material. [1,2] Furthermore, the refractive index for understoichiometric SiO x N y are found to range from Si 3 N 4 values to those recorded for amorphous Si (n ∼ 4), depending on how much O and N is incorporated into the Si-matrix.…”

Section: Materials Properties Of Silicon Oxynitridementioning

confidence: 99%

Silicon Oxynitride Thin Films Grown by Reactive HiPIMS

Hänninen¹

2015

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Amorphous silicon oxynitride (SiO x N y ) thin films were grown by reactive high power impulse magnetron sputtering from a pure silicon target in Ar/N 2 O plasmas. The elemental composition of the films was shown to depend on the target surface conditions during the film deposition, as well as on the reactive gas flow rate. When the target was sputtered under poisoned surface conditions, the film composition was predominantly silicon oxide, whereas films deposited in the transition regime between poisoned and metallic target surface conditions showed higher nitrogen concentrations, as measured by X-ray photoelectron spectroscopy (XPS) and elastic recoil detection analysis (ERDA). The different target surface conditions were identified based on the evolution of the target current waveforms upon variation of the deposition parameters. The average electron temperatures during the peak target current were determined by Langmuir probe measurements, to assist with the explanation of the observed target current behavior and target poisoning characteristics.The chemical composition of the films was shown to range from silicon-rich to effectively stoichiometric silicon oxynitrides, where no Si−Si contributions were found in the XPS Si 2p core level spectra. The film optical properties, the refractive index n and the extinction coefficient k, were shown to depend on the film chemical bonding, with the effectively stoichiometric films displaying optical properties falling between those of SiO 2 and Si 3 N 4 .iii iv Acknowledgments

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Properties of Si[sub x]O[sub y]N[sub z] Films on Si

Cited by 171 publications

References 19 publications

Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs

Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETs

Physical models for predicting plasma nitrided Si-O-N gate dielectric properties from physical metrology

Silicon Oxynitride Thin Films Grown by Reactive HiPIMS

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